Hoxan Corporation

Keiji Sawaya

Ichiro Hide

Takashi Yokoyama

Yasuhiro Maeda

Takeyuki Matsuyama

Takeshi Matsuyama

A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.

Method of forming polycrystalline silicon layer on semiconductor wafer

A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.

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Sapporo, Japan

Keiji Sawaya