Applied Materials, Inc.

Keiichi Tanaka

Mihaela A Balseanu

Li-Qun Xia

Ning Li

Tsutomu Tanaka

John C Forster

Mandyam Sriram

Mario Dave Silvetti

Kenichi Ohno

Dmitry A Dzilno

Victor Nguyen

Steven D Marcus

Alexander Viktorovich Garachtchenko

Vijayabhaskara Venkatagiriyappa

Andrew Short

Ran Liu

Francis Kanyiri Mungai

David P Thompson

Srinivas Gandikota

Mark Joseph Saly

Pramit Manna

Bhaskar Jyoti Bhuyan

Eswaranand Venkatasubramanian

Abhishek Chowdhury

Rakesh Ramadas

Sriharish Srinivasan

Srinivas Ramakrishna

Mike Murtagh

Jyoti Prakash Deo

Masaki Kitazaki

Yung-Cheng Hsu

Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Self-aligned double patterning with spatial atomic layer deposition

Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Methods and systems to modulate film stress

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

Plasma induced modification of silicon carbide surface

Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Susceptor wafer chucks for bowed wafers

Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

In-situ film annealing with spatial atomic layer deposition

Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Geometrically selective deposition of dielectric films utilizing low frequency bias

Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

Bottom-up gap-fill by surface poisoning treatment

Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.

Spatial atomic layer deposition chamber with plasma pulsing to prevent charge damage

A method of forming a blanket tungsten film by CVD process. Before forming a nucleus for a blanket W film, a mixture gas of WF gas, SiH ,gas and H gas is supplied into a vacuum chamber . Here, preprocessing is carried out for about several seconds while the respective flows of gases are regulated such that SiH gas is in excess with respect to WF gas. Preferably, the WF gas/SiH gas flow ratio is held within the range of 0.15 to 0.35, whereas the processing time is set to 2 to 10 seconds. After this preprocessing, nucleation is carried out, so as to form a blanket W film, whereby the film stress will not increase even if the W film is formed in a lower-temperature environment.

Method of reducing stress in blanket tungsten film formed by chemical vapor deposition process

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San Jose, CA, United States of America

Keiichi Tanaka