Tokyo Electron Limited

Keiichi Nagakubo

Nobuyuki Nagayama

Naoyuki Satoh

Daiki Satoh

Yusei Kuwabara

Kazuya Nagaseki

Yoshiaki Sasaki

Takahiro Miyai

A substrate processing system comprising: a heat treatment chamber configured to sublimate by-products by heat; and a substrate carrier configured to load a substrate into the heat treatment chamber, the substrate carrier including a holder for holding the substrate, and a controller configured to control operations of the heat treatment chamber, the substrate carrier, and the holder, wherein the controller is programmed to control the sublimation to, (a) maintain a temperature of the holding unit at a level equal to or higher than a predetermined temperature, while (b) inhibiting thermal damage to the substrate transfer mechanism excluding the holding unit.

Method for cleaning substrate transfer mechanism and substrate processing system

There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the two substrates. The substrate processing apparatus includes: a lower substrate detection sensor configured to detect an edge portion of a lower substrate when the lower substrate is transferred; and an upper substrate detection sensor configured to detect an edge portion of an upper substrate when the upper substrate is transferred.

Substrate processing apparatus and method of transferring substrate

A method is for cleaning a substrate transfer mechanism for loading a substrate into a heat treatment chamber for sublimating by-products by heat. The substrate transfer mechanism includes a holding unit for holding the substrate. The method includes repeatedly moving the holding unit into and out of the heat treatment chamber.

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Electrode plate for plasma etching and plasma etching apparatus

An electrode for use in a plasma processing apparatus is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to mount thereon a processing target substrate. The electrode includes an upper member provided with a plurality of gas passage holes through which a processing gas is supplied; and a lower member positioned below the upper member and provided with multiple sets of gas discharge holes through which the processing gas is discharged. Here, each gas passage hole may have a diameter larger than that of each gas discharge hole, each set of the gas discharge holes may communicate with corresponding one of the gas passage holes, and each set of the gas discharge holes may be arranged outside the rim of the corresponding one of the gas passage holes when viewed from a top thereof.

Electrode for use in plasma processing apparatus and plasma processing apparatus

Focusing ring

In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.

Surface processing method

Electrode member for a plasma processing apparatus

Electrode plate for a plasma processing apparatus

A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

Method of reusing a consumable part for use in a plasma processing apparatus

In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.

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Nirasaki, Japan

Keiichi Nagakubo