Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Shin-etsu Polymer Co., Ltd.

Keiichi Masunaga

Satoshi Watanabe

Daisuke Domon

Masaaki Kotake

Akinobu Tanaka

Masaki Ohashi

Takanobu Takeda

Ryuji Koitabashi

Tamotsu Watanabe

Youichi Ohsawa

Masahiro Fukushima

Naoya Inoue

Osamu Watanabe

Ratnam Sooriyakumaran

Yoshio Kawai

Masayoshi Sagehashi

Luisa Dominica Bozano

Jun Hatakeyama

Koji Hasegawa

Takeru Watanabe

Daniel Sanders

Takayuki Fujiwara

Linda Karin Sundberg

Takayuki Nagasawa

Martha Inez Sanchez

Kenji Yamada

Takeshi Kinsho

Yukio Inazuki

Katsuya Takemura

Hideo Kaneko

Teppei Adachi

Kenji Funatsu

Toyohisa Sakurada

Toshiya Sawai

Takashi Yoshii

Takahiro Suzuki

Shigeo Irie

A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

Chemically amplified resist composition, photomask blank, method for forming resist pattern, and method for producing polymer compound

A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

Chemically amplified negative resist composition and resist pattern forming process

A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

Chemically amplified positive resist composition and resist pattern forming process

An object of the present invention is to provide a conductive polymer composition which has good filterability and good film formability of a flat film on an electron beam resist and can be suitably used for an antistatic film for electron beam resist writing, showing excellent antistatic property in the electron beam writing process due to the property of low volume resistivity (Ω·cm), and, reducing an effect on lithography by making an effect of an acid diffused from the film minimum, and further having excellent peelability by HO or an alkaline developer after writing. A conductive polymer composition which comprises (A) a polyaniline-based conductive polymer having at least one kind or more of a repeating unit represented by the following general formula (1), and (B) a carboxylic acid salt represented by the following general formula (2):

Conductive polymer composition, coated product and patterning process

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Multifunctional polymers

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 

Onium salt, negative resist composition, and resist pattern forming process

A negative resist composition comprising an onium salt of arenesulfonic acid having a bridged ring-containing group and a base polymer is provided, the onium salt being capable of generating a bulky acid having an appropriate strength and controlled diffusion. When the resist composition is processed by lithography, a dot pattern of rectangular profile having high resolution and reduced LER is formed.

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition. 

Resist composition and resist patterning process

A novel sulfonium compound has formula (A). A positive resist composition comprising a polymer and a quencher containing the sulfonium compound is improved in resolution and LER during pattern formation and has storage stability. In formula (A), R, R, R, and Rare independently a C-Cmonovalent hydrocarbon group, p is an integer of 0-5, q is an integer of 0-5, and r is an integer of 0-4. 

Sulfonium compound, positive resist composition, and resist pattern forming process

A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 

A photomask blank () having: a transparent substrate (); a first film () etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film () formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si&#x2014;Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.

Photomask blank, method for manufacturing photomask, and mask pattern formation method

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed. 

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

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Joetsu, Japan

Keiichi Masunaga