Ebara Corporation

International Business Machines Corporation

Keiichi Kurashina

Hiroyuki Kanda

Satoru Yamamoto

Hariklia Deligianni

Mizuki Nagai

Toshio Yokoyama

Koji Mishima

Kenichi Kobayashi

Junji Kunisawa

Masahiko Sekimoto

Tsutomu Nakada

Hidenao Suzuki

Takashi Mitsuya

Keith Thomas Kwietniak

Kenichi Akazawa

Brett Caroline Baker-O'Neal

Kunihito Ide

Brett Baker

Phillipe Vereecken

Emanuel Israel Cooper

Takashi Kawakami

Panayotis Constantinou Andricacos

Philippe M Vereecken

Shinya Morisawa

Ryoichi Kimizuka

Akira Susaki

The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Substrate processing apparatus

A substrate processing apparatus comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Substrate processing apparatus and substrate transfer method

A substrate processing apparatus is described herein. The substrate processing apparatus comprises a transferring device including: a grasping section configured to grasp a substrate holder, a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Substrate processing apparatus and method of transferring a substrate

An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Etching liquid, etching method, and method of manufacturing solder bump

A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.

Substrate processing apparatus and substrate processing method

An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper. The electroplating apparatus includes: a substrate holder for holding a substrate; a sealing member for contact with a peripheral portion of a surface of a substrate, held by the substrate holder, to seal the peripheral portion; a cathode contact for contact with a conductive layer formed in the surface of the substrate, held by the substrate holder, to feed electricity to the conductive layer; and a housing having therein an anode to be immersed in a plating solution, and a porous structure disposed at an open end facing the substrate held by the substrate holder, said porous structure defining a plating chamber in the housing; wherein the plating chamber is divided into rooms by a partition plate and the porous structure, and the anode is comprised of a plurality of divided anodes, each divided anode being disposed in each room of the plating chamber so that each divided anode can pass an independent plating current.

Electroplating apparatus and electroplating method

A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Plating apparatus and plating method

A plating method is capable of mechanically and electrochemically preferentially depositing a plated film in fine interconnect recesses such as trenches and via holes, and depositing the plated film to a flatter surface. The plating method including: disposing a substrate having fine interconnect recesses such that a conductive layer faces an anode; disposing a porous member between the substrate and the anode; filling a plating solution between the substrate and the anode; and repeating a process of holding the conductive layer and the porous member in contact with each other and moving the conductive layer and the porous member relatively to each other, a process of passing an electric current between the conductive layer and the anode while keeping the conductive layer still with respect to the porous member, and a process of stopping the supply of the electric current between the conductive layer and the anode.

A plating method is capable of preferentially precipitating a plated film fully and uniformly in trenches and via holes according to a mechanical and electrochemical process, and of easily forming a plated film having higher flatness surface without being affected by variations in the shape of trenches and via holes. The plating method includes a first plating process and a second plating process. The second plating process is performed by filling a plating solution between an anode and a substrate, with a porous member placed in the plating solution, repeatedly bringing the porous member and the substrate into and out of contact with each other, passing a current between the anode and the substrate while the porous member is being held in contact with the substrate.

Plating method and plating apparatus

The present invention provides a plating apparatus for a substrate which can plate a substrate under uniform pressure without increasing a load to be applied while holding the entire surface of a porous member in contact with the surface, to be plated, of the substrate. The plating apparatus for a substrate, includes: a substrate holder for holding a substrate; a cathode unit having a seal member for abutting against and sealing, in a water-tight manner, a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder, and a cathode electrode which is brought into contact with the substrate to supply current to the substrate. An anode which is vertically moveable is disposed in confronting relation to the surface, to be plated, of the substrate; a plating solution impregnated material is disposed between the anode and the surface, to be plated, of the substrate, the plating solution impregnated material being made of a water-retentive material; and a porous member is disposed between the plating solution impregnated material and the surface, to be plated, of the substrate. The plating solution impregnated material is constructed of a plurality of separate members.

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Tokyo, Japan

Keiichi Kurashina