Tokyo Electron Limited

Keiichi Fujita

Takashi Tanaka

Yuichiro Inatomi

Nobutaka Mizutani

Tomohisa Hoshino

Kazutoshi Iwai

Masato Hamada

A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40&#xb0; C.

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Substrate processing method

A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layeras a protection layer at least on a tungsten or tungsten alloyformed on a bottom surfaceof a recessof a substrate; removing an unnecessary plating layerformed on a surfaceof the substrate; and forming a second plating layeron the first plating layerwithin the recess

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Nirasaki, Japan

Keiichi Fujita