Tokyo Electron Limited

Tocalo Co., Ltd.

Keigo Kobayashi

Yoshiyuki Kobayashi

Nobuyuki Nagayama

Yoshio Harada

Takahiro Murakami

Masaru Nishino

Junichi Takeuchi

Tatsuya Handa

Ryo Yamasaki

Masatsugu Makabe

Ryotaro Midorikawa

Tetsuya Niya

A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Plasma processing apparatus and method

Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

Ceramic coating member for semiconductor processing apparatus

Growing community of inventors

Chiba, Japan

Keigo Kobayashi