Kabushiki Kaisha Toshiba

Kei Yoshikawa

Koji Hashimoto

Soichi Inoue

Kazuhiro Takahata

Satoshi Usui

A resist pattern () is formed in a dimension of a limitation of an exposure resolution over a hard mask material film () over a work film (). The material film () is processed using the resist pattern () as a mask. A hard mask pattern () is thereby formed. Thereby a resist pattern (), over a non-selected region (), having an opening () through which a selection region () in the mask pattern is exposed is formed. Only the mask pattern () exposed through the opening () is slimmed by performing a selection etching, the work film () is etched by using the mask pattern (). A work film pattern () is thereby formed, which include a wide pattern section () of a dimension width of the limitation of the exposure resolution and a slimmed pattern section () of a dimension that is not more than the limitation of the exposure resolution.

Semiconductor device fabrication method using multiple mask patterns

Semiconductor device fabrication method and semiconductor device

Semiconductor device fabrication method using multiple resist patterns

A method of correcting a mask pattern for manufacturing a semiconductor device is disclosed. The method includes extracting a corner portion of a transistor portion. A distance from the corner portion to a line portion is extracted. A distance where the line portion does not overlap a rounding of the corner portion generated after a wafer process is obtained. A correction rule is made for a correction whether the corner portion is notched or not from the obtained distance. A corresponding relationship between the distance and an intersection part is obtained and a correction is made based on the correction rule to the corner portion.

Pattern correcting method of mask for manufacturing a semiconductor device

A pattern correcting method of a mask for manufacturing a semiconductor device includes extracting a correction portion to be corrected from a mask pattern on the mask, obtaining a surrounding environment of the correction portion and giving a correction amount to the correction portion. The correction amount is variable. The variable correction amount is given to the correction portion in accordance with the surrounding environment of the correction portion.

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Kanagawa-ken, Japan

Kei Yoshikawa