Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Kei Sakai

Satoru Yamaguchi

Yasunori Takasugi

Kazuyuki Hirao

Koichi Hamada

Ryou Yumiba

Norio Hasegawa

Makoto Suzuki

Momoyo Enyama

Makoto Sakakibara

Megumi Kimura

Miki Isawa

Hideki Itai

Masumi Shirai

Toshimasa Kameda

Katsumi Setoguchi

Muneyuki Fukuda

Takuma Yamamoto

Osamu Komuro

Fumihiro Sasajima

Kenji Tanimoto

Osamu Inoue

Satoshi Takada

Yusuke Abe

Takeyoshi Ohashi

Michio Oikawa

Yoshinori Momonoi

Takuma Shibahara

Osamu Nasu

Yoshihiro Kimura

Yasunori Goto

Kumiko Shimizu

Ryota Watanabe

Masami Ikota

Kazuhisa Hasumi

Tatsuaki Ishijima

Hiromasa Yamanashi

Keiichiro Hitomi

Junichi Kakuta

Hiroshi Nishihama

Motonobu Hommi

Takuji Miyamoto

Yafeng Zhang

Shuuichirou Takahashi

Miki Aoyagi

Masaki Sugie

A defect inspection device calculates a machine difference correction coefficient for correcting a difference in the feature amount of a reference sample between devices. When a machine difference variation coefficient indicating the change over time in the feature amount of a calibration member is outside a threshold range, the defect inspection device recalculates the machine difference correction coefficient by using the feature amount of the calibration member.

Correction coefficient calculation device, correction coefficient calculation method, and correction coefficient calculation program

The present invention enables an overlay error between processors to be measured from a pattern image, the SN ratio of which is low. To this end, the present invention forms a secondary electron imagefrom a detection signal of a secondary electron detector, forms a reflected electron imagefrom a detection signal of a reflected electron detector, creates a SUMLINE profilethat is obtained by adding luminance information in the reflected electron image along the longitudinal direction of a line pattern, and calculates an overlay error of a sample by using position information about an upper layer pattern detected from the secondary electron image and position information about a lower layer pattern that is detected by using an estimation line patternestimated on the basis of the SUMLINE profile from the reflected electron image.

Overlay measurement system and overlay measurement device for overlay error measurement using electron microscopy

Proposed is a technique that can detect a random noise component at high accuracy without measurement pattern limitation and enables edge roughness measurement at higher accuracy. According to this disclosure, pattern matching and edge position correction are performed with respect to each of the left edge and the right edge of a line pattern in an obtained line pattern image, and an image with no roughness is generated. A PSD value is measured from the image, and the average PSD value of all the frequencies is determined as a random noise component, so that the random noise component can be detected at high accuracy. Further, the PSD value (random noise component) is subtracted from the PSD value of an original image, thereby measuring edge roughness at high accuracy.

Pattern measurement system, pattern measurement method, and program for measuring edge roughness at the edge of a pattern based on a random noise component

The present invention proposes a technique for enabling the execution of measurement processing without referring to a design drawing for which it is difficult to adjust or obtain parameters for image processing that requires knowhow. This measurement system according to the present disclosure refers to a learning model generated on the basis of teaching data, which is generated from a sample image of a semiconductor, and the sample image, generates a region-segmented image from an input image (measurement subject) of a semiconductor having a predetermined structure, and uses the region-segmented image to perform image measurement. Here, the teaching data is an image in which labels, which include a structure of the semiconductor in the sample image, are assigned to each pixel of the image, and the learning model includes parameters for deducing teaching data from the sample image (see indicator 1).

Measurement system, method for generating learning model to be used when performing image measurement of semiconductor including predetermined structure, and recording medium for storing program for causing computer to execute processing for generating learning model to be used when performing image measurement of semiconductor including predetermined structure

The objective of the present invention is to reduce differences between individual electron beam observation devices accurately by means of image correction. This method for calculating a correction factor for correcting images between a plurality of electron beam observation devices, in electron beam observation devices which generate images by scanning an electron beam across a specimen, is characterized by including: a step in which a first electron beam observation device generates a first image by scanning a first electron beam across first and second patterns, on either a specimen including the first pattern and the second pattern, having a different shape or size to the first pattern, or a first specimen including the first pattern and a second specimen including the second pattern; a step in which a second electron beam observation device generates a second image by scanning a second electron beam across the first and second patterns; and a step in which the first or second electron beam observation device calculates a correction factor at a peak frequency extracted selectively from first and second frequency characteristics calculated on the basis of the first and second images.

Electron beam observation device, electron beam observation system, and image correcting method and method for calculating correction factor for image correction in electron beam observation device

To shorten a time required for evaluation of a recipe while suppressing an increase in a data amount. A charged particle beam device includes a microscope that scans a charged particle beam on a sample, detects secondary particles emitted from the sample, and outputs a detection signal and a computer system that generates a frame image based on the detection signal and processes an image based on the frame images. The computer system calculates a moment image between a plurality of the frame images, and calculates a feature amount data of the frame image based on a moment.

Charged particle beam device

Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.

Pattern measurement device and non-transitory computer readable medium having stored therein program for executing measurement

Provided is an electron beam observation device that includes: an electron source; an objective lens concentrating an electron beam emitted from the electron source; and a control unit configured to perform control such that a plurality of images is generated by capturing images of a reference sample having a specific pattern, and a frequency characteristic is calculated for each of the plurality of images, in which an image is generated based on a secondary signal generated from a sample due to irradiation of the sample with the electron beam, and the control unit holds the plurality of frequency characteristics.

Electron beam observation device, electron beam observation system, and control method of electron beam observation device

To acquire a correction image by performing a sub-pixel shift process for shifting an image using a pixel interpolation filter by a pixel shift amount between pixels and a frequency correction process for correcting a frequency characteristic of the image after shifted.

Electron beam device and image processing method

The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

Charged particle beam device for imaging vias inside trenches

An image forming device is provided that is capable of forming a proper integrated signal even when an image or a signal waveform is acquired from a pattern having the possibility of preventing proper matching, such as a repetition pattern, a shrinking pattern, and the like. In particular, the image forming device forms an integrated image by integrating a plurality of image signals and is provided with: a matching processing section that performs a matching process between the plurality of image signals; an image integration section that integrates the plurality of image signals for which positioning has been performed by the matching processing section; and a periodicity determination section that determines a periodicity of a pattern contained in the image signals. The matching processing section varies a size of an image signal area for the matching in accordance with a determination by the periodicity determination section.

Image-forming device, and dimension measurement device

Provided is a charged particle beam apparatus, aiming at obtaining an image and the like focused on the sample surface and the bottom while preventing the visual field deviation occurred when focusing on the sample surface and the bottom respectively. The charged particle beam apparatus forms a first image (), which is based on detection of the first energy charged particles, based on an irradiation with a beam whose focus is adjusted on a sample surface side, forms a second image () which is based on detection of second energy charged particles having a relatively higher energy than the first energy and a third image () which is based on the detection of the first energy charged particles, based on the irradiation with a beam whose focus is adjusted on a bottom side of a pattern included in the sample, acquires a deviation between the first image and the third image, and composes the first image and the second image so as to correct the deviation.

Charged particle beam apparatus

The purpose of the present invention is to provide an overlay error measuring device which measures an overlay error with high accuracy even when a lower layer pattern is disposed under a thin film and a sufficient signal amount cannot be ensured. The present invention proposes an overlay error measuring device provided with an arithmetic processing unit for measuring a pattern formed on a sample on the basis of a signal waveform obtained by a charged particle beam device. The arithmetic processing unit finds a correlation with the signal waveform using a partial waveform obtained on the basis of partial extraction of the signal waveform, forms a correlation profile indicating the correlation, and measures an overlay error using the correlation profile.

Overlay error measuring device and computer program for causing computer to measure pattern

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Tokyo, Japan

Kei Sakai