Kabushiki Kaisha Toshiba

Kei Hayasaki

Shinichi Ito

Kenji Kawano

Eishi Shiobara

Tatsuhiko Ema

Daisuke Kawamura

Tomoyuki Takeishi

Riichiro Takahashi

Katsuya Okumura

Tsuyoshi Shibata

Rempei Nakata

Nobuhide Yamada

Soichi Inoue

Toshiya Kotani

Yuichiro Yamazaki

Tadahito Fujisawa

Toru Mikami

Satoshi Tanaka

Kazuya Fukuhara

Yasunobu Onishi

Masafumi Asano

Kentaro Matsunaga

Fumio Komatsu

Tatsuhiko Higashiki

Kenji Chiba

Koutarou Sho

Daizo Mutoh

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N).

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

Pattern forming method and a semiconductor device manufacturing method

This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

Semiconductor device manufacturing method to form resist pattern

Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Structure inspection method, pattern formation method, process condition determination method and resist pattern evaluation apparatus

A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device

According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

Substrate processing method and manufacturing method of semiconductor device

There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle

A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Apparatus for processing substrate and method of processing the same

A temperature calibration method for a baking apparatus comprising forming a photoresist film onto a substrate, forming a latent image of a dose monitor mark onto the photoresist film, preparing baking processing apparatuses, baking the substrate or another substrate by temperature settings performed every repeat of a series of the forming the resist film and the forming the latent image with each prepared baking apparatus, cooling the baking-processed substrate, measuring a length of the latent image of the dose monitor mark after the cooling or a length of a dose monitor mark which being obtained by developing the resist film, determining relationship between a temperature setting and an effective dose in advance, and calibrating temperature settings corresponding to the each baking processing apparatus to be obtained a predetermined effective dose on the basis of the determining relationship and the measured length corresponding to the each baking processing apparatus.

Temperature calibration method for baking processing apparatus, adjustment method for development processing apparatus, and method of manufacturing semiconductor apparatus

A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method

An method for evaluating sensitivity of a photoresist includes transferring an exposure dose monitor mark onto an inspection resist film with an inspection setting exposure dose using an exposure tool. Inspection sensitivity index varying according to the inspection setting exposure dose is measured, using an inspection transferred image of the exposure dose monitor mark delineated on the inspection resist film. An inspection photoresist sensitivity of the inspection resist film is calculated using sensitivity calibration data, based on the inspection sensitivity index.

Method for evaluating sensitivity of photoresist, method for preparation of photoresist and manufacturing method of semiconductor device

A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

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Kamakura, Japan

Kei Hayasaki