Applied Materials, Inc.

Kedi Wu

Srinivas Gandikota

Mandyam Sriram

Shih Chung Chen

Chi-Chou Lin

Ilanit Fisher

Chenfei Shen

He Ren

Naomi Yoshida

Wen Xiao Chen

Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

Method of reducing titanium nitride etching during tungsten film formation

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Fluorine-free tungsten ALD for dielectric selectivity improvement

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Fremont, CA, United States of America

Kedi Wu