Hitachi Chemical Company, Ltd.

Resonac Corporation

Showa Denko Materials Co., Ltd.

Kazuyuki Mitsukura

Masaya Toba

Kazuhiko Kurafuchi

Takashi Masuko

Shinichiro Abe

Shigeki Katogi

Takashi Kawamori

Yoshinori Ejiri

Tomonori Minegishi

Yu Aoki

Kenichi Iwashita

Masaki Yamaguchi

Takuya Komine

Kohsuke Urashima

Yuki Imazu

A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.

Semiconductor package

method for selecting a photosensitive resin composition exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm2 and heat-treating the resin film at 150° C. to 5 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm; performing a fatigue test of repeatedly pulling the strip sample under specific conditions; and selecting a photosensitive resin composition satisfying the following condition: the number of times of pulling required until the 15 strip sample breaks in the fatigue test is 100 or more cycles.

Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device

A layered plate including a copper layer having a thickness of 5 μm or less, and a resin layer provided on a surface of the copper layer, in which a water absorption rate of the resin layer is 1% or less after being left in an environment of 130° C. in temperature and 85% in relative humidity for 200 hours.

Layered plate and wiring base board production method

Disclosed is a method for manufacturing a wiring structure including a step of forming a wiring on an insulating resin layer. The step of forming the wiring includes: forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating.

Wiring structure, method for manufacturing same, and semiconductor package

A wiring board according to the present disclosure includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring, in which the metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.

Wiring board and production method for same

An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.

Substrate and method for manufacturing the same

A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Wiring board and method for manufacturing the same

Organic interposer and method for manufacturing organic interposer

There are provided an organic interposer capable of improving insulation reliability and a method for manufacturing the organic interposer. An organic interposeris provided with: an organic insulating laminatecomprising a plurality of organic insulating layers; and a plurality of wiresarranged in the organic insulating laminate, and each of the wiresand each of the organic insulating layers are separated by a barrier metal film. The organic insulating laminatemay include: a first organic insulating layerhaving a plurality of grooveseach having each of the wiresdisposed therein; and a second organic insulating layerlaminated to the first organic insulating layerin such a way as to embed the wires

One aspect of the present invention relates to a resin composition comprising a curable resin and a curing agent, which is used for forming an inter-wiring layer insulating layer in contact with a copper wiring.

Resin composition, wiring layer laminate for semiconductor, and semiconductor device

The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin having a phenolic hydroxyl group as an end group (A); a radiation-polymerizable compound (B); and a photoinitiator (C), a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, and a semiconductor device using the photosensitive resin composition.

Photosensitive resin composition, film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, and semiconductor device

To provide a manufacturing method capable of manufacturing a high density semiconductor device excellent in transmission between chips at a favorable yield and at low cost. A method for manufacturing a semiconductor device includes an insulating layer forming step of forming an insulating layerhaving a trenchabove a substrate, a copper layer forming step of forming a copper layeron the insulating layerso as to fill the trench, and a removing step of removing the copper layeron the insulating layerby a fly cutting method so as to retain a copper layer part in the trench

Semiconductor device and method for manufacturing same

The present invention relates to a photosensitive adhesive composition that has thermal press bondability to an adherent after being patterned by exposure and development and enables alkali development, wherein a storage elastic modulus at 110&#xb0; C. after exposure and further heat curing is not less than 10 MPa.

Photosensitive adhesive composition, film-like adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device

A photosensitive adhesive capable of alkali development, the photosensitive adhesive exhibiting adhesion property for an adherend after it has been patterned by light exposure and development, the photosensitive adhesive being used in a method for producing a semiconductor devicecomprising a step of patterning the photosensitive adhesiveprovided on a circuit surface of a semiconductor chipby light exposure and development; and a step of directly bonding another semiconductor chipto the patterned photosensitive adhesive

Method of producing semiconductor device with patterned photosensitive adhesive

A method for manufacturing a semiconductor device, comprising a first step of providing a photosensitive adhesive (insulating resin layer) on a boardwhich has a connecting terminal, a second step of patterning the photosensitive adhesive by light exposure and development so that openingsare formed where the connecting terminal is exposed, a third step of filling the openingswith a conductive material to form a conductive layer, and a fourth step of directly bonding a semiconductor chiphaving a connecting electrode section to the photosensitive adhesive while electrically connecting the connecting terminal of the boardand the connecting electrode section of the semiconductor chipvia the conductive layer

Growing community of inventors

Tokyo, Japan

Kazuyuki Mitsukura