Canon Anelva Corporation

Kazuyuki Iori

Masayoshi Ikeda

Yasumi Sago

Yukito Nakagawa

The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel () is divided by a grid () having communication holes into a plasma generation chamber () and a plasma processing chamber (). On the upper wall () of the plasma generation chamber (), magnetic coils () are arranged such that magnetic field lines within the vacuum vessel () point from the center of the vacuum vessel () to a side wall (), and, outside the side wall () of the plasma generation chamber (), ring-shaped permanent magnets () are arranged such that a polarity pointing to the inside of the vacuum vessel () is a north pole and a polarity pointing to the outside of the vacuum vessel () is a south pole.

Plasma processing device, plasma processing method and method of manufacturing element including substrate to be processed

A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets () are regularly arrayed to be point-symmetrical about a specific point. The specific point is at a position shifted from the center of rotation of the holding plate by the rotation mechanism.

Growing community of inventors

Kawasaki, Japan

Kazuyuki Iori