Tokyo Electron Limited

Iwatani Corporation

Tel Manufacturing and Engineering of America, Inc.

Kyoto University

Kazuya Dobashi

Kyoko Ikeda

Kensuke Inai

Misako Saito

Yukimasa Saito

Takehiko Senoo

Yu Yoshino

Chishio Koshimizu

Takehiko Orii

Kenji Sekiguchi

Shuji Moriya

Matthew C Gwinn

Tsunenaga Nakashima

Teruyuki Hayashi

Masaru Nishino

Shuuichi Nishikido

Kenichi Oyama

Kunihiko Koike

Koichi Izumi

Noriaki Okabe

Tadashi Shojo

Toshiki Hinata

Kohei Tsugita

Hiromitsu Kambara

Reo Kosaka

Luis Fernandez

Sakurako Natori

Masato Nakajo

Takahiro Yasutake

Keita Kanehira

Tatsuya Suzuki

Nobuyuki Takahashi

Hiroshi Shinriki

Akitaka Shimizu

Akinobu Kakimoto

Jiro Matsuo

Takashi Fuse

Akitake Tamura

Koji Kagawa

Toshio Seki

Masaru Amai

Mikio Suzuki

Hideki Nishimura

Shigeru Kawamura

Hiroshi Kannan

Shigeyoshi Kojima

Toshihiro Aida

Kenta Yasuda

Takashi Magara

Takaaki Aoki

Syuhei Yonezawa

Noboru Tamura

Toshihide Takashima

Sung Tae Lee

Yudai Ito

There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Gas cluster processing device and gas cluster processing method

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Substrate cleaning method, processing container cleaning method, and substrate processing device

A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.

Processing apparatus and processing method, and gas cluster generating apparatus and gas cluster generating method

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Substrate cleaning apparatus

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Pattern enhancement using a gas cluster ion beam

A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

Cleaning method and substrate processing apparatus

A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.

According to the present invention, a substrate processing apparatus has a chamber (), a stage () for holding a substrate (W) to be processed in the chamber (), and a nozzle part () from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber () is performed by: placing a prescribed reflecting member (dW,) in the chamber (), blasting a gas cluster (C) onto the reflecting member (dW,), and applying the gas-cluster flow reflected by the reflecting member (dW,) onto a wall section of the chamber () to remove particles (P) adhered to the wall section of the chamber ().

Method for cleaning chamber of substrate processing apparatus

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.

Method and apparatus for substrate processing

Disclosed is a substrate cleaning method. In this substrate cleaning method, a step (step) is performed wherein a removal target film and located above a processing target film is patterned; after step, a step (step) is performed wherein the patterned removal target film is used as an etching mask to perform anisotropic etching on the processing target film; after step, a step (step) is performed wherein the remaining removal target film on the processing target film is subjected to gas chemical etching; and after step, a step (step) is performed wherein a target substrate, which includes the surface of the processing target film, is irradiated with gas clusters, thereby cleaning the surface of the processing target film by removing non-reactive or non-volatile residues remaining on the surface of the processing target film.

Substrate cleaning method, substrate processing method, substrate processing system and semiconductor device manufacturing method

A substrate cleaning apparatus for removing particles adhered to a substrate includes a cleaning chamber for cleaning a substrate under a vacuum atmosphere, a mounting unit, provided in the cleaning chamber, for mounting the substrate thereon. The substrate cleaning apparatus further includes a nozzle unit for injecting a cleaning gas from an area of a higher pressure than an atmosphere in which the substrate is mounted toward the substrate in the cleaning chamber, generating a gas cluster as an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion and irradiating the gas cluster to the substrate in a direction perpendicular thereto, a gas exhaust port for evacuating the cleaning chamber, and a moving unit for relatively moving the mounting unit and the nozzle unit.

In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.

Substrate cleaning method, substrate cleaning apparatus and vacuum processing system

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Yamanashi, Japan

Kazuya Dobashi