Mitsui Engineering and Shipbuilding Company Limited

Mitsui Engineering & Shipbuilding

Mitsui Engineering Co. Ltd.

Kazutoshi Murata

Naomasa Miyatake

Hiroyuki Tachibana

Yasunari Mori

Nozomu Hattori

Shigehiro Nishino

Jiro Matsuo

Isao Yamada

Noriaki Toyoda

Kazuki Takizawa

Keisuki Washio

Yoshiharu Chinone

An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.

Atomic layer deposition apparatus

An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

Atomic layer deposition apparatus and thin film forming method

Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate () in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen () onto the surface of an aminosilane molecular layer (). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer () adsorbed onto the surface of the silicon substrate () is oxidized, thereby forming a silicon oxide layer () corresponding to one atomic layer of silicon on the surface of the silicon substrate ().

Method and apparatus for growing plasma atomic layer

An atomic layer growing apparatus includes a film forming chamber () in which the vapor phase growth of a film is performed, a substrate table () having a heating mechanism accommodated in the film forming chamber (), and an exhaust mechanism (). The atomic layer growing apparatus also includes a material supply unit () including a material vaporizer (), two buffer tanks, i.e., a buffer tank A () and buffer tank B (), a fill valve A () and supply valve A () of the buffer tank A (), a fill valve B () and supply valve B () of the buffer tank B (), an injection control valve (), and a control unit () which controls the opening/closing of each valve.

Atomic layer growing apparatus

From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the &#x3b1;-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter &#x3b1;-SiC single crystal wafer.

Large-diameter SiC wafer and manufacturing method thereof

The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*10atoms/cmor less to produce the SiC monitor wafer.

Production method of SiC monitor wafer

The present invention has its object to make it possible to produce an &#x3b1;-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles, and so on, a &#x3b2;-SiC substrateand an SiC raw materialare placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube. The radiation tubeis heated by an induction heating coil, radiates radiation heat, and uniformly heats the cruciblesand so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the &#x3b2;-SiC substrate

Growing community of inventors

Tamano, Japan

Kazutoshi Murata