Mitsubishi Jukogyo Kabushiki Kaisha

Kazutoshi Hamamoto

Satoshi Uchida

Yoshiaki Takeuchi

Masayoshi Murata

Masaru Kodama

A plasma CVD apparatus whose discharge electrode is a single line member bent in a U shape in an alternating manner and in which a substrate to be processed is held substantially in parallel to the discharge electrode. The electric field around the electrode becomes stronger and the intensity distribution of this field becomes even. As a result, a product film formed on the substrate surface has a uniform thickness, and the film can be formed at high speeds.

Plasma CVD apparatus

A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.

Growing community of inventors

Nagasaki, Japan

Kazutoshi Hamamoto