Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Kazuto Ogawa

Takanori Sato

Kazuki Narishige

Hisataka Hayashi

Tokuhisa Ohiwa

Akihito Toda

Akira Nakagawa

Rie Inazawa, Legal Representative

Katsunori Hirai

Hiroie Matsumoto

Hideki Konishi

In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Semiconductor device manufacturing method

A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.

Plasma processing method and plasma processing apparatus

Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber(ST); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST), and a cycle including the exciting of the first gas (ST) and the exciting of the second gas (ST) is repeated multiple times.

A processing method which, when an organic film layer such as a PR film layerformed on the surface of a wafer W is to be removed from an SiOfilm layerbelow it by generating plasma of a process gas in a chambercomprises the step of using Ogas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same Ogas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.

Processing method

An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (). The etching method uses a mixed gas containing NHgas and Ogas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NHgas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.

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Tokyo, Japan

Kazuto Ogawa