Hoya Corporation

Tekscend Photomask Corp.

Kazutake Taniguchi

Hiroaki Shishido

Hitoshi Maeda

Ryo Ohkubo

Kazuaki Matsui

Naoto Yonemaru

A mask blank has a structure where a thin film for pattern formation and a hard mask film are stacked in this order on a transparent substrate, featured in that the thin film is formed of a material containing chromium, the hard mask film includes a stacked structure of a lower layer and an upper layer, the lower layer is formed of a material containing silicon and oxygen, the upper layer is formed of a material containing tantalum and oxygen with an oxygen content of 30 atom % or more, and the ratio of a thickness of the upper layer relative to a total thickness of the hard mask film is 0.7 or less.

Mask blank and method of manufacturing photomask

Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below.&#x2264;0.0733&#xd7;+0.4069&#xd7;+1.0083 &#x2003;&#x2003;Formula (1)&#x2265;29.316&#xd7;&#x2212;92.292&#xd7;+72.671 &#x2003;&#x2003;Formula (2)

Mask blank, transfer mask, and method of manufacturing semiconductor device

Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index nof 1.5 or more for light of 193 nm wavelength and an extinction coefficient kof 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index nof 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient kof 0.4 or less for light of 193 nm wavelength, and the refractive index nand the extinction coefficient ksatisfy at least one of a set of specified conditions.

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below.&#x2264;0.0733&#xd7;+0.4069&#xd7;+1.0083&#x2003;&#x2003;Formula (1)&#x2265;29.316&#xd7;&#x2212;92.292&#xd7;+72.671&#x2003;&#x2003;Formula (2)

Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index nof 1.5 or more for light of 193 nm wavelength and an extinction coefficient kof 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index nof 2.6 or more for light of 193 nm wavelength and an extinction coefficient kof 0.4 or less for light of 193 nm wavelength, and the refractive index nand the extinction coefficient ksatisfy at least one of k&#x2264;[(&#x2212;0.188&#xd7;n)+0.879] and k&#x2264;[(2.75&#xd7;n)&#x2212;6.945].

Growing community of inventors

Tokyo, Japan

Kazutake Taniguchi