Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kazutaka Ishigo

Kazuya Fukuhara

Yosuke Okamoto

Nobuhiro Komine

Manabu Takakuwa

Masayuki Hatano

Tetsuya Kugimiya

Kazuhiro Segawa

Kentaro Kasa

Hiroyuki Morinaga

Yoshinori Hagio

Noriaki Sasaki

Tomoyasu Kudo

Taketo Kuriyama

Yuu Yamayose

Takaki Kumanomido

Yuki Murasaka

A pattern accuracy detecting apparatus includes a stage for supporting a substrate, an optical warpage detecting unit that measures a shape of a substrate disposed on the stage, an optical pattern detection unit that detects a position of a pattern on the substrate, and a processing unit that corrects the detected pattern position based on the measured shape of the substrate.

Pattern accuracy detecting apparatus and processing system

According to one embodiment, a method includes preliminarily measuring the amount of overlay or alignment shift of the mark for overlay or alignment measurement while sequentially shifting a position of a measurement area relative to the mark for overlay or alignment measurement so as to position the mark for overlay or alignment measurement on each of a plurality of partial areas. The measurement area corresponds to a field angle of the optical measurement system, and an inside of the measurement area is two-dimensionally divided into the partial areas. The method includes calculating a tool-induced shift regarding a characteristic deviation of the optical measurement system for each of the plurality of partial areas based on a preliminarily measured result of the amount of overlay or alignment shift. The method includes determining a partial area to be used from among the plurality of partial areas on the basis of the tool-induced shift calculated for each of the plurality of partial areas.

Overlay/alignment measurement method and overlay/alignment measurement apparatus

According to one embodiment, there is provided an exposure apparatus including an acquisition unit, and a calculation unit. The acquisition unit obtains a plurality of measured values. The plurality of measured values is measured for a plurality of focus offset quantities different from each other. Each of the plurality of measured values represents positional deviation distribution within a shot area. The calculation unit calculates a plurality of distortion errors from the plurality of measured values and obtains a correlation between the focus offset quantity and alignment compensation value to compensate for the distortion error, in response to the plurality of focus offset quantities and the plurality of distortion errors.

Exposure apparatus, exposure control system, and exposure method

A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.

Mask and method for fabricating semiconductor device

A method of inspecting a mark arrangement according to an embodiment of the present invention includes: generating mask data in which mark seed data that includes an inspection mark that includes vector information and is not drawn on a mask and mark data is arranged on a scribe line of the mask, calculating coordinates of the inspection mark from a reference position of the mark seed data, detecting an arrangement state of the inspection mark with respect to the reference position by using the coordinates and vector information, and judging whether the mark seed data is correctly arranged by comparing the arrangement state of the inspection mark with an arrangement check rule.

Mark arrangement inspecting method, mask data, and manufacturing method of semiconductor device

A method of forming a monitor mark includes forming an insulating film on a semiconductor substrate, and forming a first repetitive line pattern group and a second repetitive line pattern group by patterning the insulating film on the semiconductor substrate, such that the first repetitive line pattern group and the second repetitive line pattern group face each other with a predetermined space therebetween.

Pattern monitor mark and monitoring method suitable for micropattern

A pattern designing method according to an embodiment of the present invention includes: designing a first pattern for inspection formed by arraying a plurality of first mark rows, in which rectangular marks are arrayed at predetermined intervals in a first direction, in a second direction perpendicular to the first direction and designing a second pattern for inspection formed by arraying, in the second direction, a plurality of second mark rows in which rectangular marks are arranged among the marks arrayed in the first direction of the first mark row and a forming position in the second direction is arranged to overlap the first mark row by predetermined overlapping length.

Pattern forming method, pattern designing method, and mask set

According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide.

Semiconductor device and method of fabricating the same

In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.

Growing community of inventors

Mie, Japan

Kazutaka Ishigo