Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Other

Mitsubishi Materials Corporation

Mitsubishi Materials Silicon Corporation

Sumico Corporation

Kazushige Takaishi

Sakae Koyata

Katsuhiko Murayama

Tomohiro Hashii

Takeo Katoh

Shinichi Ogata

Takayuki Kihara

Yasuyuki Hashimoto

Tohru Taniguchi

Shigeru Okuuchi

Shunsuke Mikuriya

Keiichi Takanashi

Ryuichi Tanimoto

Tomonori Miura

Yasunori Yamada

Yuichi Kakizono

Kazuo Fujimaki

Masashi Norimoto

Yuichi Nakayoshi

Hironori Nishimura

Takeru Takushima

Tadashi Denda

Akihiro Kudo

Mikio Kishimoto

Chizuko Matsuo

Ryoko Takada

Tetsurou Taniguchi

Chin Fu Tsai

Mikio c/o Central Research Institute Kishimoto

The sum of torques: the torque of the sun gear and the torque of the internal gear, and the ratio of the torques are controlled within predetermined ranges.

Method of double-side polishing work, method of producing work, and double-side polishing apparatus for a work

Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.

Epitaxial silicon wafer and production method thereof

An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished. The method is a wafer polishing method in which wafersare polished by supplying a polishing solution to surfacesof a pair of polishing padspositioned above and below carrierseach having a circular holefor retaining the wafers, the carriersbeing thinner than the wafers; and sliding the polishing padsrelatively to the carriers, thereby simultaneously polishing both surfaces of the wafersretained in the carriers. The method is characterized in that information sourced from the carrierswhen a difference between the thickness of the carriersand the thickness of the wafersreaches a predetermined value is detected to calculate the thickness of the wafers, thereby terminating polishing.

Wafer polishing method

A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.

Method for manufacturing epitaxial wafer

Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.

Method for producing epitaxial silicon wafer

An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

Method for etching single wafer

A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

Method of polishing silicon wafer

Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.

An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer

An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer

Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

Method for smoothing wafer surface and apparatus used therefor

An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer. The singe wafer etching apparatus includes a plurality of supply nozzlescapable of discharging the etching solutionfrom discharge openingsonto the front surface of the wafer, nozzle-moving devices each capable of independently moving the plurality of supply nozzles, and an etching solution supplying devicefor supplying the etching solutionto each of the plurality of supply nozzles and discharging the etching solutionfrom each of the discharge openings to the front surface of the wafer

Single wafer etching method

An alkali etchant for controlling surface roughness of a semiconductor wafer, which is a sodium hydroxide solution or a potassium hydroxide solution having a weight concentration of 55 wt % to 70 wt %.

Alkaline etchant for controlling surface roughness of semiconductor wafer

This wafer polishing apparatus includes: a polishing plate having a polishing pad; a carrier plate which is placed facing the polishing pad and which slides and presses wafers against the polishing pad, while rotating in a state of holding the wafers; and an abrasive slurry supply device, wherein the abrasive slurry supply device is able to supply different abrasive slurries, each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries. This method for polishing wafers includes: while supplying an abrasive slurry to a surface of a polishing pad, sliding and pressing wafers against the polishing pad, wherein different abrasive slurries are supplied to the surface of the polishing pad, and each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries.

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Tokyo, Japan

Kazushige Takaishi