Japan Pionics Co., Ltd.

E.e. Technologies Inc.

Kazushige Shiina

Yasushi Iyechika

Yukichi Takamatsu

Tatsuya Ohori

Yoshiyasu Ishihama

Takeo Yoneyama

Yoshinao Komiya

Junji Komeno

Noboru Suda

A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Chemical vapor deposition apparatus

A film-forming device with a substrate rotating mechanism includes a susceptorin the form of a circular disk; a base platepositioned below the susceptorand rotatably retaining the susceptor; a revolution generating sectionrotating the susceptorat the outer periphery of the susceptor; a plurality of substrate tray retaining sectionsarranged on the susceptor; a plurality of annular substrate traysrotatably supported in the corresponding substrate tray retaining sections; a rotation generating sectionrotating the substrate trays; and a plurality of substrates W retained in the substrate trays. The substrates W are revolved by the rotation of the susceptorand rotated by the rotation of the substrate traysto apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating sectionand the rotation generating section

Film-forming device with a substrate rotating mechanism

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Tokyo, Japan

Kazushige Shiina