Fujitsu Corporation

Kazuo Tokitomo

Yasutaka Ban

Toshio Kurahashi

Kenji Sugishima

Tadashi Kiriseko

Tadakazu Takada

Toshihiko Ono

Hitoshi Hoshino

A photomask for an ultraviolet light with a contrast of 10 or larger can be fabricated by generating a color center by irradiating a calcium fluoride crystal substrate with a KrF excimer laser (wavelength of 248 nm) with an energy of 10 J/cm.sup.2 through an original photomask formed by a chromium film on a quartz substrate and forming a pattern by a color center corresponding to an original photomask pattern. In the same way, a similar photomask can be fabricated by irradiating a calcium fluoride crystal substrate with X-rays having a wavelength ranging from 0.5 to 1.0 nm through an original mask formed by a gold film on the silicon substrate.

Photomask and fabrication of the same

A reticle comprises a substrate transparent to an optical beam, an opaque layer provided on the substrate for interrupting the optical beam according to the desired pattern, the opaque layer being patterned to form an opaque pattern that interrupts the optical beam and a transparent pattern that transmits the optical beam selectively according to the desired pattern; and a phase shift pattern transparent to the optical beam for transmitting the optical beam therethrough, wherein the phase shift pattern comprises an electrically conductive material and provided on the substrate in correspondence to the transparent pattern in the opaque layer, for canceling the diffraction of the optical beam passed through the transparent pattern.

Reticle for photolithographic patterning

A process for dry etching an aluminum film or an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as the etchant gas.

Dry etching of metal film

A layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is covered with a positive photoresist film which is then heat treated. An upper surface of the photoresist film is covered with a polyimide resin which is heat treated, thereafter. If the semiconductor device is devoid of the layer of phospho-silicate glass, and the layer of aluminum is exposed, a positive photoresist film is interposed on the aluminum and the polyimide resin is applied to cover the upper surface of the interlayer, and is heat treated.

Method of manufacturing semiconductor devices having photoresist film as

In a method of manufacturing semiconductor devices, liquid glass is applied to the substrate of a semiconductor device to cover the upper surface of a film of photoresist formed on a conductor layer of the substrate and used as an etching mask for patterning the conductor layer. The substrate is baked at a sufficiently high temperature to harden the liquid glass and deform and shrink the photoresist film to expose the sides of such film. The photoresist film is removed. The hardened liquid glass on the photoresist film is simultaneously removed by lift off.

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Aizuwakamatsu, Japan

Kazuo Tokitomo