Toshiba Memory Corporation

Kazuo Tawarayama

Nobuhiro Komine

Kazuya Fukuhara

In a pattern shape adjustment method according to one embodiment, a correspondence relation between a first shape feature amount of a first on-substrate pattern formed on a first substrate and a first laser band width of laser light as exposure light used when forming the first on-substrate pattern is acquired. Also, a second shape feature amount of a second on-substrate pattern actually formed on a second substrate is measured. Then, a second laser band width according to the shape of a third on-substrate pattern to be formed on a third substrate is calculated based on the correspondence relation and the second shape feature amount. Further, the third substrate is exposed to laser light having the second laser band width.

Pattern shape adjustment method, pattern shape adjustment system, exposure apparatus, and recording medium

According to one embodiment, there is provided a mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system. The mask alignment mark including a plurality of patterns arranged in a predetermined direction at a pitch of substantially P=&#x3bb;/{2&#xd7;(1&#x2212;&#x3c3;)&#xd7;(LNA)}, where &#x3c3; is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and &#x3bb; is a wavelength of light.

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Yokkaichi, Japan

Kazuo Tawarayama