Hitachi-high-technologies Corporation

Hitachi, Ltd.

Denso Corporation

Kazuo Takata

Yutaka Kudou

Satoshi Tani

Hironobu Kawahara

Takashi Fujii

Noriaki Yamamoto

Masamichi Sakaguchi

Go Saito

Hiroaki Ishimura

Eiji Ishikawa

Yuji Kato

Masaharu Nishiumi

Yutaka Kudoh

The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SFand Oor a mixed gas of SF, Oand SiFand having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.

Etching method and etching equipment

A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.

Method for etching and apparatus for etching

A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Method for manufacturing semiconductor device

The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.

Process for etching

Growing community of inventors

Kudamatsu, Japan

Kazuo Takata