Shin-etsu Handotai Co., Ltd.

Kazuo Mamada

Norihiro Kobayashi

Masatake Katayama

Satoshi Oka

Yuichi Matsumoto

A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.

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Annaka, Japan

Kazuo Mamada