Mitsui Chemicals, Inc.

Ulvac, Inc.

Nec Corporation

National Institute of Advanced Industrial Science and Technology

Nippon Light Metal Company, Ltd.

Asm Japan K.k.

Sanyo Electric Co., Ltd.

Rohm Co., Ltd.

Tazmo Co., Ltd.

Rohn Co., Ltd.

Mitsu Chemicals, Inc.

Kazuo Kohmura

Yosuke Ono

Atsushi Okubo

Daiki Taneichi

Hirofumi Tanaka

Tsuneaki Biyajima

Nobutoshi Fujii

Yasuhisa Kayaba

Hisako Ishikawa

Shoko Ono

Yasuyuki Sato

Toshiaki Hirota

Jun Kamada

Akira Ishikawa

Tsuneji Suzuki

Yoshiaki Oku

Masami Murakami

Takeshi Kubota

Kaichiro Haruta

Kenichi Fujii

Keizo Kinoshita

Yasuyoshi Hyodo

Nobutaka Kunimi

Yasuhisa Fujii

Takahiro Nakayama

Toshihiko Kanayama

Shigeru Mio

Takashi Unezaki

Takeo Yamada

Takashi Kozeki

Atsuko Sekiguchi

Yuichi Kato

Shunsuke Oike

Yoshito Kurano

Michio Eriguchi

Yoshihiro Taguchi

Shinichi Chikaki

Ryotaro Yagi

Yoshinori Shishida

Tomoya Matayoshi

Shintaro Maekawa

Yoichi Kodama

Kiyokazu Koga

Ryohei Ogawa

Kiyomi Imagawa

Akihiro Okabe

Yousuke Ono

Ying Zhou

Nobuko Matsumoto

A pellicle demounting method includes providing a stack including a photomask, a pellicle frame, and a pellicle film that are arranged in this order, forming of a pressure-sensitive adhesive layer on the pellicle film in the stack, and a demounting step of demounting at least the pellicle film and the pressure-sensitive adhesive layer from the photomask in the stack having the pressure-sensitive adhesive layer formed thereon.

Pellicle demounting method and pellicle demounting preprocessing device

A pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3σ of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 μm; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 μm.

Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography

The disclosure addresses provision of a pellicle demounting method having excellent property with respect to reduction of contamination of a photomask. A method of demounting a pellicle, the method is provided which includes: providing a stack including a photomask, a pellicle frame, and a pellicle film that are arranged in this order; providing an electrode; and a demounting step including disposing the stack and the electrode such that the pellicle film in the stack and the electrode face each other, and applying a voltage to the electrode to generate an electrostatic attractive force, which attracts the pellicle film in a direction toward the electrode, thereby demounting the pellicle film from the photomask in the stack.

Pellicle demounting method, and pellicle demounting device

A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(═O)OX groups in a molecule, in which from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.

Substrate laminated body and method of manufacturing substrate laminated body

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

Pellicle, exposure master, exposure device and method for manufacturing semiconductor device

This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

Method for producing semiconductor device and intermediate for semiconductor device

Provided is an adhesive member including: a base material having an uneven shape on at least one surface; and a surface layer covering at least a portion of the surface having the uneven shape on the base material.

Adhesive member and production method for adhesive member

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.

Supporting frame for pellicle, pellicle, method for manufacturing same, exposure master using same, and method for manufacturing semiconductor device

A support frame for pellicle is provided including a first support frame part, a second support frame part, and a filter, wherein the filter has a flat plate-shaped frame shape and is sandwiched by the first support frame part and the second support frame part, the first support frame part includes a first body part having a flat plate-shaped frame shape and a first engaging portion protruded from the first body part to a thickness direction of the support frame for pellicle, and the second support frame part includes a second body part having a flat plate-shaped frame shape and a second engaging portion of the second body part engaging with the first engaging portion being arranged in a concave part provided in the thickness direction of the support frame for pellicle.

Pellicle support frame, pellicle, method for manufacturing pellicle support frame, and exposure original plate and exposure device employing pellicle

A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle () includes a pellicle film (); a support frame (); and a first adhesive layer () provided at an end of the support frame, the end being opposite to an end on which the pellicle film is extended. The pellicle further includes an inorganic layer () on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient (&#x3bc;) in the range of 5&#xd7;10cm/g to 2&#xd7;10cm2/g.

Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device

The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

Semiconductor substrate manufacturing method, semiconductor device, and method for manufacturing same

The present invention provides; a pellicle frame which can effectively inhibit distortion of the photo mask () caused by mounting the pellicle (), and which does not have a complex shape, and a pellicle which uses said pellicle frame are provided, and a manufacturing method of a blackened pellicle frame is also provided which can reduce the defect of the surface flickering under concentrated light and which facilitates inspection of the foreign matter adhesion prior to use. The present invention relates to a pellicle frame with an anodized film on a surface of an aluminum alloy frame, characterized in that: the aluminum alloy frame comprises an aluminum alloy which contains Ca: 5.0 to 10.0% by mass with the remainder aluminum and unavoidable impurities are contained, and has an area (volume) ratio of an AlCa phase, which is a dispersed phase, is greater than or equal to 25%, and a crystal structure of a part of the AlCa phase is monoclinic; wherein the AlCa phase dispersed in the anodized film is anodized, and the anodized film is stained with a black dye.

Pellicle frame and pellicle

A method for producing a pellicle according to the one embodiment of the present invention produces a pellicle including a pellicle film and a pellicle frame supporting an outer peripheral portion of the pellicle film. The method includes forming the pellicle film on a substrate, and bonding a pressure-sensitive adhesive sheet, that is elastic and has a pressure-sensitive adhesive force thereof decreased upon receipt of external stimulation, to each of two surfaces of the substrate; making a notch inside a part of the substrate, the part having the pressure-sensitive adhesive sheets bonded thereto; separating a substrate outer peripheral portion outer to the notch of the substrate, in a state where the pressure-sensitive adhesive sheets are bonded to the substrate, to form a pellicle frame; and stimulating the pressure-sensitive adhesive sheets to peel off the pressure-sensitive adhesive sheets.

Pellicle manufacturing method and method for manufacturing photomask with pellicle

The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.

Pellicle frame, pellicle containing same, method for producing pellicle frame, and method for producing pellicle

Growing community of inventors

Chiba, Japan

Kazuo Kohmura