Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Kazuo Kawamura

Shinichi Akiyama

Yasunori Uchino

Naoyoshi Tamura

Hirofumi Watatani

Hisaya Sakai

Kazuya Okubo

Takeshi Ito

Satoshi Inagaki

Yosuke Shimamune

Hiroyuki Ohta

Akira Katakami

Hidenobu Fukutome

Satoshi Takesako

Masanori Uchida

Kimihiko Hosaka

The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71&#xb0; C. or more containing hydrogen peroxide.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.

Method of manufacturing a semiconductor device and semiconductor device

A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.

Semiconductor device and method of manufacturing the same

A method for fabricating a semiconductor device includes the steps of: forming a first MISFET including first source/drain regions and a first gate electrode of a polycrystalline silicon, and a second MISFET including second source/drain regions and a second gate electrode of a polycrystalline silicon and having a gate length larger than that of the first gate electrode; and substituting the polycrystalline silicon forming the first and the second gate electrodes with a metal silicide. In the step of substituting the polycrystalline silicon with the metal silicide, the polycrystalline silicon forming the first gate electrode is totally substituted with the metal silicide and a part of polycrystalline silicon forming the second gate electrode is substituted with the metal silicide by utilizing that the gate length of the second gate electrode is larger than the gate length of the first gate electrode.

Method for fabricating semiconductor device with fully silicided gate electrode

A semiconductor device fabrication method by which the thermal stability of nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor substrate on which a gate region, a source region, and a drain region are formed. Dinickel silicide is formed by performing a first annealing step, followed by a selective etching step. By performing a plasma treatment step, plasma which contains hydrogen ions is generated and the hydrogen ions are implanted in the dinickel silicide or the gate region, the source region, and the drain region under the dinickel silicide. The dinickel silicide is phase-transformed into nickel silicide by performing a second annealing step.

Method for fabricating semiconductor device

A p-channel MOS transistor includes source and drain regions of p-type formed in a silicon substrate at respective lateral sides of a gate electrode wherein each of the source and drain regions of p-type includes any of a metal film region and a metal compound film region as a compressive stress source accumulating therein a compressive stress.

P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereof

A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

Semiconductor device and a fabrication process thereof

A method of fabricating a semiconductor device comprises the step of forming a nickel monosilicide layer selectively over a silicon region defined by an insulation film by a self-aligned process. The self-aligned process comprises the steps of forming a metallic nickel film on a silicon substrate on which the insulation film and the silicon region are formed, such that the metallic nickel film covers the insulation film and the silicon region, forming a first nickel silicide layer primarily of a NiSi phase on a surface of the silicon region of the metallic nickel film by applying an annealing process to the silicon substrate, removing the metallic nickel film, after the step of forming the first nickel silicide layer, by a selective wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of a NiSi phase by a thermal annealing process conducted in a silane gas.

Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gas

A method of fabricating a semiconductor device includes the steps of forming a metallic nickel film on a silicon substrate such that the metallic nickel film covers an insulation film on the silicon substrate and a silicon surface of the silicon substrate, annealing the silicon substrate in a silane gas ambient at a temperature not exceeding 220&#xb0; C. to form a first nickel silicide layer having a composition primarily of NiSi on the silicon surface and a surface of the metallic nickel film, removing the metallic nickel film after the step of forming the nickel silicide layer by a wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of nickel monosilicide (NiSi) by applying a thermal annealing process.

Fabrication process of a semiconductor device

A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

The semiconductor device fabrication method comprising the step of forming a gate electrode on a semiconductor substrate; the step of forming a source/drain diffused layer in the semiconductor substrate on both sides of the gate electrode; the step of burying a silicon germanium layer in the source/drain diffused layer; the step of forming an amorphous layer at an upper part of the silicon germanium layer; the step of forming a nickel film on the amorphous layer; and the step of making thermal processing to react the nickel film and the amorphous layer with each other to form a silicide film on the silicon germanium layer.

Semiconductor device fabrication method

The method for fabricating a semiconductor device comprises the step of forming a Co filmon a gate electrodehaving a gate length Lof below 50 nm including 50 nm; the first thermal processing step of making thermal processing to react the Co filmand the gate electrodewith each other to form a CoSi filmon the upper part of the gate electrode; the step of selectively etching off the unreacted part of the Co film; and the second thermal processing step of making thermal processing to react the CoSi filmand the gate electrodewith each other to form a CoSifilmon the upper part of the gate electrode, wherein in the first thermal processing step, the CoSi filmis formed so that the ratio h/w of the height h of the CoSi filmto the width w of the CoSi filmis below 0.7 including 0.7.

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Kawasaki, Japan

Kazuo Kawamura