Sumitomo Osaka Cement Co., Ltd.

Tokyo Electron Limited

Kazunori Ishimura

Mamoru Kosakai

Ryuuji Hayahara

Hitoshi Kouno

Takashi Satou

Takeshi Watanabe

Yasuharu Sasaki

Yukio Miura

Shinichi Maeta

Yuuki Kinpara

Toshiyuki Makabe

Kenji Masuzawa

Yoshiaki Moriya

Keisuke Maeda

Kentaro Takahashi

Yuhki Kinpara

Kazuto Ando

Tomomi Ito

Kei Furuuchi

Teruyasu Fujita

An electrostatic chuck device includes: an electrostatic chuck part having, as a main surface, a mounting surface on which a plate-shaped sample is mounted, an electrostatic attraction electrode; a base part configured to cool the electrostatic chuck part; a heater disposed in a layered manner between the electrostatic chuck part and the base part; and an adhesion layer which bonds and integrates the electrostatic chuck part and the base part together, in which the electrostatic chuck part is provided with a first through-hole, the base part is provided with a second through-hole communicating with the first through-hole, the adhesion layer is provided with a third through-hole communicating with the first through-hole and the second through-hole, a tubular insulator is fixed in the second through-hole, and an end of the insulator located on the electrostatic chuck part side is separated from the electrostatic chuck part with a space interposed therebetween.

Electrostatic chuck device

An electrostatic chuck device includes: an electrostatic chuck part which incorporates an internal electrode for electrostatic attraction and has a placing surface on which a plate-like sample is placed; a base part which cools the electrostatic chuck part; and an adhesion layer which bonds the electrostatic chuck part and the base part to integrate the parts together, in which a first through-hole is provided in the electrostatic chuck part, a second through-hole that communicates with the first through-hole is provided in the base part, a tubular insulator is fixed in the second through-hole, an annular sealing member is sandwiched between the electrostatic chuck part and a distal end surface of the insulator, wherein the distal end surface is located on the electrostatic chuck part side of the insulator, and a tubular insulating wall member is located at the inner side of the sealing member in the radial direction.

A plate-shaped body for temperature measurement which, simply by being mounted on a mounting surface of an electrostatic chuck apparatus and without using a semiconductor wafer itself, is able to easily optimize the in-plane temperature distribution of the mounting surface of the electrostatic chuck apparatus, the temperature rising characteristics, and the cooling characteristics during decreases in temperature. In such plate-shaped body for temperature measurement (), an insulating adhesive () is bonded to the entirety of a surface () of a wafer (), a heater element () is provided on the insulating adhesive (), a temperature measurement region () is provided used to measure the temperature of the surface () of the wafer () in a region excluding the heater element () on the surface () of the insulating adhesive (), and the heater element () and the temperature measurement region () are coated with an insulating film ().

Plate-shaped body for temperature measurement and temperature measuring apparatus provided with the same

An electrostatic chuck part of an electrostatic chuck device has an electrostatic chuck part inner peripheral surface surrounding an opening of a chuck part through-hole, and an electrostatic chuck part outer peripheral surface surrounding the electrostatic chuck part inner peripheral surface. An insulator has an insulator main body in which an insulator through-hole having an opening on the electrostatic chuck part side is formed, an insulator inner end face, and an insulator outer end face which faces the electrostatic chuck part outer peripheral surface. The insulator inner end face and the electrostatic chuck part inner peripheral surface are in contact with each other, or an adhesion layer or a plasma-resistant adhesive layer extends in a gap between the insulator inner end face and the electrostatic chuck part inner peripheral surface. The plasma-resistant adhesive layer is formed between the electrostatic chuck part outer peripheral surface and the insulator outer end face.

Electrostatic chuck device, and semiconductor manufacturing device

Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Electrostatic chuck apparatus

An electrostatic chuck apparatus including:

An electrostatic chuck device includes an electrostatic chuck section (), which has a principal surface that is a mounting surface on which a plate-like sample (W) is placed, and has an internal electrode for electrostatic adsorption () incorporated in the section, and a temperature adjustment base section () which adjusts the temperature of the electrostatic chuck section (); wherein a part or all of a surface of the temperature adjustment base section () is covered by a sheet-like or film-like insulating material () wherein the surface faces the side where the electrostatic chuck section is located; a thin plate-like heater element () is bonded on the insulating material (); and the electrostatic chuck section () and the temperature adjustment base section () are integrated with each other via an organic insulating adhesive layer () formed by curing a liquid adhesive.

An electrostatic chuck device is provided in which it is possible to uniformize an in-plane temperature distribution in a placement surface on which a plate-shaped sample such as a wafer is placed and it is possible to improve in-plane uniformity of plasma etching of the plate-shaped sample by uniformizing plasma density on the plate-shaped sample. The electrostatic chuck device includes an electrostatic chuck section that has an upper surface as a placement surface on which a plate-shaped sample is placed, and is made to have an internal electrode for electrostatic adsorption built-in, and a cooling base section that cools the electrostatic chuck section, wherein a heater element () having a heater pattern () of a predetermined shape is provided between the electrostatic chuck section and the cooling base section, and an island-shaped portion () that is independent from the heater pattern () and is made of the same material as the heater pattern () is provided in a gap portion () of the heater pattern ().

The plastic film electrostatic adsorption apparatus of the present invention comprises an electrostatic adsorption electrode, an insulated dielectric layer that covers the electrostatic adsorption electrode and has a center line average roughness of an adsorption surface on which a plastic film is placed of 0.5 micrometers or less, and a power supply electrode that applies a voltage to the electrostatic adsorption electrode. According to this plastic film electrostatic adsorption apparatus, surface treatment can be performed even in a vacuum without requiring tedious work such as application or removal of adhesive. In addition, even if the plastic film expands and deforms due to heat treatment and plasma treatment performed during surface treatment, there is no occurrence of wrinkling, deformation or separation in the plastic film due to the difference in thermal expansion between the electrostatic adsorption surface and plastic film.

Growing community of inventors

Tokyo, Japan

Kazunori Ishimura