Tokyo Electron Limited

Kazunori Funazaki

Kazushi Kaneko

Hideo Kato

Naoki Matsumoto

Kiyotaka Ishibashi

Koji Koyama

Eiji Takahashi

Shinji Kawada

Yuji Otsuka

Yunosuke Hashimoto

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

Plasma processing device and high-frequency generator

A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Microwave automatic matcher and plasma processing apparatus

A plasma processing apparatus () is provided with: a processing container (), in which processing is performed using plasma; a plasma generating mechanism (), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (), and which generates plasma in the processing container () using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Plasma processing apparatus and high frequency generator

A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

Method for inspecting magnetron

A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generatorincluding a magnetronconfigured to generate the high frequency wave; detectorsandconfigured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuitconfigured to control a voltage supplied to the magnetronby a power supply. Further, the voltage control circuitincludes a load control device configured to supply, to the magnetron, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detectorto the power of the traveling wave measured by the detector

Plasma processing apparatus, plasma processing method and high frequency generator

Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

A plasma processing apparatus includes a processing container and a plasma generating mechanism including a high-frequency oscillator. The arrangement is configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator. In addition, an impedance regulator is configured to adjust impedance to be applied to the high-frequency oscillator. Further, a determining unit is configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on (a) a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and (b) a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Growing community of inventors

Miyagi, Japan

Kazunori Funazaki