Agc Inc.

Asahi Glass Company, Limited

Kazunobu Maeshige

Nobutaka Aomine

Hiroshi Hanekawa

Hirotomo Kawahara

Yuki Aoshima

Yusuke Kobayashi

Kazuyuki Hayashi

Toshiyuki Uno

Takahiro Mashimo

Takaaki Murakami

Makoto Sano

Nobuhiro Nakamura

Masaki Mikami

Teruo Fujiwara

Azusa Takai

Kiyoshi Tamai

Masahiro Kishi

Mamoru Isobe

Hiroyuki Okawa

Takuji Oyama

Naoto Kihara

Hitoshi Onoda

Yoji Yasui

Manaya Kubono

To appropriately suppress reflection of far-infrared rays, and appropriately form an antireflection film. A far-infrared ray transmission member () includes a base material () that transmits far-infrared rays, and a functional film () that is formed on the base material () and includes a low refractive index layer () containing oxide as a principal component and having a refractive index equal to or smaller than 1.5 with respect to light at a wavelength of 10 μm. The low refractive index layer () contains MgO as a principal component, and a content of MgO is equal to or larger than 50 mass % and equal to or smaller than 100 mass % with respect to the entire low refractive index layer ().

Far-infrared ray transmission member and method for manufacturing far-infrared ray transmission member

The present invention provides a cover glass and a glass laminate which are reduced in warpage, and have excellent scratch resistance, low reflecting properties and excellent optical properties. According to the present invention, a cover glass and a glass laminate which are reduced in glass warpage, retain the effect of scratch resistance, and have low reflecting properties and excellent optical properties can be provided by alternately superposing a film including a high-refractive-index material and a film including a low-refractive-index material, in given amounts.

Cover glass and glass laminate

A curved substrate with a film includes a substrate having a first main surface, a second main surface and an end surface, and an antiglare film provided on the first main surface. The substrate has a flat portion and a bent portion. A value obtained by dividing a reflected-image diffusibility index value R of the bent portion by the sum of the reflected-image diffusibility index value R of the bent portion and a reflected-image diffusibility index value R of the flat portion is 0.3 or higher and 0.8 or less.

Curved substrate with film, method for producing the same, and image display device

A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.

Translucent substrate, organic LED element and method of manufacturing translucent substrate

A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cmto 3800 cmin a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

Method of producing glass substrate and glass substrate

A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.

Plasma source for a plasma CVD apparatus and a manufacturing method of an article using the plasma source

A glass substrate provided with a coating film, including a glass substrate and a coating film containing at least one TiOlayer having a refractive index of at least 2.20 at a wavelength of 632 nm, formed by low temperature plasma CVD method on the glass substrate, and a method for producing a glass substrate provided with a coating film, which includes forming a TiOlayer on a glass substrate by low temperature plasma CVD method using a film-forming material containing at least one member selected from an alkoxide type titanium material, an amide type titanium material and a halide type titanium material, at a plasma power density of at least 55 kW/m at a film-forming rate of from 15 to 200 nm&#xb7;m/min.

Coating film-equipped glass substrate, and method for producing coating film-equipped glass substrate

To provide a process for producing an EUV mask blank, whereby the deformation of a substrate due to film stress in a Mo/Si multilayer reflective film can be reduced, and the change with time of the film stress in the Mo/Si multilayer reflective film can be reduced. A process for producing a reflective mask blank for EUVL, which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming an absorber layer for absorbing EUV light, on the multilayer reflective film, to produce a reflective mask blank for EUV lithography, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the uppermost layer of the multilayer reflective film is a Si film, and after forming the absorber layer, the substrate on which the absorber layer is formed is subjected to heating treatment at a temperature of from 110 to 170&#xb0; C.

Reflective mask blank for EUV lithography and process for its production

To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate;

Reflective mask blank for EUV lithography

To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate;

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Tokyo, Japan

Kazunobu Maeshige