Mitsubishi Materials Corporation

Mitsubishi Shindoh Co., Ltd.

Ulvac, Inc.

Kazunari Maki

Yuki Ito

Hiroyuki Mori

Hirotaka Matsunaga

Shinichi Funaki

Kosei Fukuoka

Naoki Miyashima

Kenichiro Kawasaki

Yosuke Nakasato

Daiki Yamashita

Kenichi Yaguchi

Kenji Morikawa

Yoshiteru Akisaka

Kiyotaka Nakaya

Isao Arai

Yuki Inoue

Takumi Odaira

Yoshiyuki Nagatomo

Nobuyuki Terasaki

Yoshirou Kuromitsu

Kenji Kubota

Satoru Mori

Haruhiko Asao

Toshio Sakamoto

Takashi Tamagawa

Seiichi Ishikawa

Fuyumi Mawatari

Norihisa Iida

Kazuaki Sakai

Shuhei Arisawa

Takanori Kobayashi

Shin Oikawa

Shigeru Shimoizumi

Takahiro Takeda

This copper alloy contains 10-100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise; 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50. The electrical conductivity is 97% IACS or greater. The half-softening temperature is 200° C. or higher. The residual stress ratio RSat 180° C. for 30 hours is 20% or greater. The ratio RS/RSat 180° C. for 30 hours is greater than 1.0.

Copper alloy, plastically worked copper alloy material, component for electronic/electrical equipment, terminal, heat dissipation substrate

This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 μm or more, and when a measurement area of 1 mmor more is measured by an EBSD method at a measurement interval of 1 μm, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Pure copper material, insulating substrate, and electronic device

A slit copper material comprises 99.96% by mass or greater of Cu. In this slit copper material, a ratio W/t of a plate width W to a plate thickness t is 10 or greater, an electrical conductivity is 97.0% IACS or greater, a ratio B/A of an average crystal grain size B in a plate surface layer portion to an average crystal grain size A in a plate center portion is in a range of 0.80 or greater and 1.20 or less, and the average crystal grain size A in the plate center portion is 25 μm or less.

Slit copper material, part for electric/electronic device, bus bar, heat dissipation substrate

A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/μm or more and 100% by mass/μm or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.

Cu—Ni—Si based copper alloy plate, Cu—Ni—Si based copper alloy plate with plating film, and methods of producing the same

This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 μm or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio T/Tis greater than 0.95 and less than 1.08. The half-softening temperature Tis 210° C. or higher.

Copper alloy, copper alloy plastic working material, component for electronic/electrical device, terminal, bus bar, lead frame, and heat dissipation substrate

A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/μm or more and 1000% by mass/μm or less.

Copper alloy plate, copper alloy plate with plating film, and methods for producing these

Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/μm or more and 5 mass %/μm or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

Copper alloy sheet, copper alloy sheet with plating film, and method for producing same

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

Terminal material for connector

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/&#x3bc;m or more and 50% by mass/&#x3bc;m or less.

Copper alloy plate, copper alloy plate with plating film, and manufacturing method thereof

A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/&#x3bc;m or more and 50 mass %/&#x3bc;m or less.

Copper alloy plate, plating film-attached copper alloy plate, and methods respectively for manufacturing these products

This copper alloy for electronic or electric devices includes: Mg: 0.15 mass % or greater and less than 0.35 mass %; and P: 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy [Mg]+20&#xd7;[P]&#x3c;0.5, and 0.20&#x3c;(NF/(1&#x2212;NF))&#x2264;0.45 is satisfied in a case where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to total grain boundary triple junctions is represented by NF, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is represented by NF.

Copper alloy for electronic/electric device, copper alloy sheet/strip material for electronic/electric device, component for electronic/electric device, terminal, and busbar

A superconductivity stabilizing material used for a superconducting wire and which is formed of a copper material containing at least one of additive elements selected from Ca, Sr, Ba, and rare earth elements in a range of 3 ppm by mass or more and 100 ppm by mass or less in total, with a remainder being Cu and unavoidable impurities, in which the total concentration of the unavoidable impurities, excluding O, H, C, N, and S which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, the half-softening temperature thereof is 200&#xb0; C. or lower, the Vickers hardness thereof is 55 Hv or more, and the residual resistance ratio (RRR) thereof is 50 or more and 500 or less.

Superconductivity stabilizing material, superconducting wire and superconducting coil

A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 &#x3bc;m to 1.2 &#x3bc;m inclusive; the copper-tin alloy layer is a compound alloy layer in which CuSnis a main ingredient and part of copper in the CuSnis substituted with nickel, and an average crystal grain size is 0.2 &#x3bc;m to 1.5 &#x3bc;m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 &#x3bc;m to 1000 &#x3bc;m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

Tin-plated copper terminal material and method of manufacturing the same

A copper alloy for electronic and electrical equipment is provided, including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, a content [Mg] (mass %) of Mg and a content [P] (mass %) of P satisfy a relational expression of [Mg]+20&#xd7;[P]&#x3c;0.5, and a content of H is 10 mass ppm or less, a content of O is 100 mass ppm or less, a content of S is 50 mass ppm or less, and a content of C is 10 mass ppm or less.

Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relay

Growing community of inventors

Saitama, Japan

Kazunari Maki