Nitta Dupont Incorporated

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Kazuki Moriyama

Selvanathan Arumugam

Allen S Bulick

Koichi Yoshida

Shunji Ezawa

Hideaki Nishizawa

A polishing slurry according to the present invention is a polishing slurry for polishing copper or a copper alloy, the polishing slurry including abrasives, an organic acid, an oxidizing agent, and alkali. The polishing slurry further includes polycarboxylic acid, and alkylbenzenesulfonic acid, in which a concentration of the polycarboxylic acid is 0.1 to 0.5 mass % in terms of concentration of sodium polycarboxylate, and a concentration of the alkylbenzenesulfonic acid is 0.3 mass % or more in terms of concentration of alkylbenzenesulfonate triethanolamine.

Polishing slurry

A polishing slurry according to the present invention is a polishing slurry for polishing a polishing object including a resin, wherein the polishing slurry includes alumina abrasives and silica abrasives, the silica abrasives include aggregate particles composed of a plurality of primary particles of colloidal silica, and an average particle size of the primary particles is smaller than a median size of the alumina abrasives.

A polishing composition is for polishing a resin, and includes alumina abrasive grains, a dispersant, and water. A ratio between a primary average particle size of alumina particles in the alumina abrasive grains and an average particle size of the alumina particles measured by dynamic light scattering is 1:6.0 to 1:100.

Polishing composition

A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.

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Kyoto, Japan

Kazuki Moriyama