Hamamatsu-Photonics K.k.

Mitsubishi Heavy Industries Limited

Japan Aerospace Exploration Agency

Hamamatsu Phonotics K.k.

Sionyx, Inc.

Kazuhisa Yamamura

Terumasa Nagano

Kenichi Sato

Akira Sakamoto

Koei Yamamoto

Ryutaro Tsuchiya

Yoshitaka Ishikawa

Satoshi Kawai

Yoshimaro Fujii

Takashi Iida

Kazumasa Kosugi

Masaharu Muramatsu

Hisanori Suzuki

Yasuhito Yoneta

Yoshikatsu Kuroda

Hiroo Yamamoto

Daisuke Matsuura

Tadayuki Takahashi

Shin Watanabe

Yasuhito Miyazaki

Shinji Ohsuka

Kei Gemba

Shin'ichiro Takeda

Shintaro Kamada

A through-slit is provided in a semiconductor wafer. A first virtual cutting line defines a chip portion including an energy ray sensitive region as viewed from a direction perpendicular to a first main surface. The shortest distance from a second virtual cutting line to the edge of a second semiconductor region is smaller than the shortest distance from the first virtual cutting line to the edge of the second semiconductor region. The through-slit penetrates through the semiconductor wafer in the thickness direction along the second virtual cutting line. A side surface to which a first semiconductor region is exposed is formed in the chip portion by providing the through-slit. A fourth semiconductor region of a first conductivity type is provided on the side surface side of the chip portion by adding impurities to the side surface to which the first semiconductor region is exposed.

Semiconductor wafer manufacturing method, method of manufacturing semiconductor energy beam detecting element, and semiconductor wafer

Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Detector, PET system and X-ray CT system

A photodiode arrayhas a plurality of photodetector channelswhich are formed on an n-type substratehaving an n-type semiconductor layer, with a light to be detected being incident to the plurality of photodetector channels. The photodiode arraycomprises: a p-type semiconductor layerformed on the n-type semiconductor layerof the substrate; resistorseach of which is provided to each of the photodetector channelsand is connected to a signal conductorat one end thereof; and an n-type separating partformed between the plurality of photodetector channels. The p-type semiconductor layerforms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating partis formed so that each of the multiplication regions AM of the p-type semiconductor layercorresponds to each of the photodetector channels

Photodiode array

A light receiving region includes a plurality of light detecting sections. The light detecting sectionshas a second contact electrodeA. The second contact electrodeA is arranged at a position overlapping a first contact electrodeA, so as to contact the first contact electrode. Further, a resistive layerB is continued to the second contact electrodeA.

A radiation measuring apparatus () includes a scatterer detector (A), an absorber detector (B) and a processing unit (). Pixel electrodes () of the scatterer detector (A) and the absorber detector (B) are arranged such that a distance between centers of two neighbor pixel electrodes () is smaller than a mean free path of a recoil electron generated in the Compton scattering of an electromagnetic radiation. The processing unit () specifies and incidence direction of the electromagnetic radiation based on a recoiling direction to which the recoil electron recoils. In this way, an electron tracking-type Compton camera is realized which confines the incidence direction of the electromagnetic radiation by using the recoiling direction of the recoil electron in a Compton camera using a semiconductor detector.

Radiation measuring apparatus and radiation measuring method

A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

A ptype semiconductor substratehas a first principal surfaceand a second principal surfaceopposed to each other and includes a photosensitive region. The photosensitive regionis composed of an ntype impurity region, a ptype impurity region, and a region to be depleted with application of a bias voltage in the ptype semiconductor substrate. An irregular asperityis formed in the second principal surfaceof the ptype semiconductor substrate. An accumulation layeris formed on the second principal surfaceside of the ptype semiconductor substrateand a region in the accumulation layeropposed to the photosensitive regionis optically exposed.

Photodiode and photodiode array

A radiation detector has a semiconductor substrate of a first conductivity type, a plurality of semiconductor regions of a second conductivity type making junctions with the semiconductor substrate, and a plurality of electrodes joined to the corresponding semiconductor regions. The electrodes cover the corresponding semiconductor regions, when viewed from a direction perpendicular to a first principal face. The semiconductor regions include a plurality of first and second semiconductor regions in a two-dimensionally array. The first semiconductor regions arrayed in a first direction in the two dimensional array out of the plurality of first semiconductor regions are electrically connected to each other, and the second semiconductor regions arrayed in a second direction intersecting with the first direction out of the plurality of second semiconductor regions are electrically connected to each other.

Radiation detector

Prepared is an ntype semiconductor substratehaving a first principal surfaceand a second principal surfaceopposed to each other, and having a ptype semiconductor regionformed on the first principal surfaceside. At least a region opposed to the ptype semiconductor regionin the second principal surfaceof the ntype semiconductor substrateis irradiated with a pulsed laser beam to form an irregular asperity. After formation of the irregular asperity, an accumulation layerwith an impurity concentration higher than that of the ntype semiconductor substrateis formed on the second principal surfaceside of the ntype semiconductor substrate. After formation of the accumulation layer, the ntype semiconductor substrateis subjected to a thermal treatment.

Semiconductor light-detecting element

Growing community of inventors

Hamamatsu, Japan

Kazuhisa Yamamura