Asahi Denka Kogyo Kabushiki Kaisha

Adeka Corporation

Asahi Denka Kogyo K.k.

Asahi Denka Co., Ltd.

Kazuhisa Onozawa

Naoki Yamada

Toshiya Shingen

Atsushi Sakurai

Hiroki Sato

Tsuyoshi Watanabe

Atsuya Yoshinaka

Takayoshi Azumi

Naoyasu Kurita

Akifumi Masuko

Takashi Higashino

Mitsutoshi Sasajima

Kunio Osasawara

A composition containing 100 parts by mass of a siloxane compound having &#x2014;HSiRO&#x2014; (wherein R is a hydrogen atom, a hydrocarbon group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms or a phenoxy group) and 0.0001 to 1 part by mass of at least one phenol compound of general formula (1) or (2) as a stabilizer. wherein a and b are each an integer of 0 to 4; m is 0 or 1; p and q are each 1 or 2; R, R, R, and Rare each an alkyl group having 1 to 4 carbon atoms; Xand Xeach represent an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogen atom; Y is an alkanediyl group having 1 to 4 carbon atoms; and a plurality of Rs, Rs, Rs, Rs, Xs, Xs or Ys, where present per molecule, may be the same or different.

Composition containing siloxane compound and phenol compound

Process of forming thin film and precursor for chemical vapor deposition

Metal compound solution and thin film formation using the same

A material for chemical vapor deposition comprising a &bgr;-diketonatocopper (II) complex which is liquid at room temperature.

Copper material for chemical vapor deposition and process for forming thin film using the same

A ruthenium or ruthenium oxide thin film produced by CVD using as a ruthenium source a compound represented by formula (I):

Process of producing a ruthenium or ruthenium oxide thin film

A method of processing waste gas exhausted from chemical vapor deposition equipment, which entails:

Method for processing waste gas exhausted from chemical vapor and

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Tokyo, Japan

Kazuhisa Onozawa