Shin-etsu Chemical Co., Ltd.

Kazuhiro Katayama

Jun Hatakeyama

Koji Hasegawa

Masayoshi Sagehashi

Masaki Ohashi

Masahiro Fukushima

Tomohiro Kobayashi

Takeru Watanabe

Youichi Ohsawa

Takayuki Fujiwara

Takeshi Kinsho

Kenji Funatsu

Tsunehiro Nishi

Teppei Adachi

Seiichiro Tachibana

Masashi Iio

Kentaro Kumaki

Chuanwen Lin

Tsutomu Ogihara

Toshinobu Ishihara

Yoshio Kawai

Katsuya Takemura

Mutsuo Nakashima

Ryosuke Taniguchi

Katsuhiro Kobayashi

Takao Yoshihara

Ryo Mitsui

Kazuya Honda

Kenji Yamada

Shun Kikuchi

Yuki Kera

An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Onium salt, chemically amplified resist composition and patterning process

A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.

Sulfonium salt, chemically amplified resist composition, and patterning process

A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Molecular resist composition and patterning process

A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

Resist composition and patterning process

A novel sulfonium compound of formula (A) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in lithography properties.

Sulfonium compound, chemically amplified resist composition, and patterning process

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. 

Onium salt, chemically amplified resist composition, and patterning process

A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

Iodonium salt, resist composition, and pattern forming process

A photoacid generator having formula (1a) is provided. A chemically amplified resist composition comprising the PAG forms a pattern of rectangular profile with a good balance of sensitivity and LWR when processed by photolithography using ArF excimer laser, EB or EUV. 

Photoacid generator, chemically amplified resist composition, and patterning process

A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Monomer, polymer, resist composition, and patterning process

A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.

Resist composition and pattern forming process

The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion. The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1'), 

Sulfonium salt, resist composition, and patterning process

A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R-Rare monovalent hydrocarbon groups, Xis a divalent hydrocarbon, group, Zis an aliphatic group, Zforms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer. 

A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R-Rare monovalent hydrocarbon groups, Xis a divalent hydrocarbon group, Zis an aliphatic group, Zforms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer. 

A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development. 

Growing community of inventors

Joetsu, Japan

Kazuhiro Katayama