Tokyo Electron Limited

Kazuhiro Isa

Junichi Kitagawa

Masaru Sasaki

Shigenori Ozaki

Jun Yamashita

Yoshiro Kabe

Hideo Nakamura

Hideyuki Noguchi

Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a YOfilm. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

Plasma processing apparatus

In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing Ointo the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.

Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning

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Amagasaki, Japan

Kazuhiro Isa