Nitto-Denko Corporation

Dai Nippon Printing Co., Ltd.

Toda Kogyo Corporation

Kazuhiro Ikemura

Keisuke Yoshikawa

Kazuhito Hosokawa

Takuji Okeyui

Chikao Ikenaga

Shinya Akizuki

Tsutomu Nishioka

Satoshi Ito

Kentarou Seki

Takuya Eto

Masachika Masuda

Eiji Toyoda

Takahiro Uchida

Makoto Kuwamura

Takashi Fukushima

Shinichiro Sudo

You Shimazaki

Takashi Taniguchi

Sadahito Misumi

Hisataka Ito

Toshitsugu Hosokawa

Katsumi Okayama

Hideyuki Usui

Kazumasa Igarashi

Kazumi Yamamoto

Megumu Nagasawa

Katsumi Shimada

Daisuke Tsukahara

Tomohiro Dote

Tadaaki Harada

Shigehisa Yamamoto

Shinichi Ohizumi

Tsuyoshi Ishizaka

Michio Komoto

Masaharu Abe

Kaoru Kobayashi

Masataka Tada

Katsuyuki Nakabayashi

Minoru Yamane

Kei Toyota

Takeshi Okada

Hideto Kimura

Haruo Tabata

Kazushi Nishimoto

A semiconductor device includes a die pad, a semiconductor element which is loaded on the die pad, and a sealing resin. A plurality of electrically conductive portions each having a layered structure including a metal foil comprising copper or a copper alloy, and electrically conductive portion plating layers provided at both upper and lower ends of the metal foil are arranged around the die pad. The die pad has a lower die pad plating layer, and the semiconductor element is loaded on the die pad comprising such a die pad plating layer. Electrodes provided on the semiconductor element are electrically connected with top ends of the electrically conductive portions via wires, respectively. The lower electrically conductive portion plating layers of the electrically conductive portions and the die pad plating layer of the die pad are exposed outside from the sealing resin on their back faces.

Semiconductor device, substrate for producing semiconductor device and method of producing them

A semiconductor device P includes a die pad, a semiconductor elementwhich is loaded on the die pad, and a sealing resin. A plurality of electrically conductive portionseach having a layered structure including a metal foilcomprising copper or a copper alloy, and electrically conductive portion plating layersprovided at both upper and lower ends of the metal foilare arranged around the die pad. The die padhas a lower die pad plating layer, and the semiconductor elementis loaded on the die padcomprising such a die pad plating layer. Electrodesprovided on the semiconductor elementare electrically connected with top ends of the electrically conductive portionsvia wires, respectively. The lower electrically conductive portion plating layersof the electrically conductive portionsand the die pad plating layerof the die padare exposed outside from the sealing resinon their back faces.

A substrate B for use in production of a semiconductor device is used, which substrate includes an adhesive sheethaving a base layerand an adhesive layer, and a plurality of independently provided electrically conductive portions. A semiconductor element having electrodesformed thereon is firmly fixed onto the substrate B, and upper portions of the plurality of electrically conductive portionsand the electrodesof the semiconductor elementare electrically connected by using wires. The semiconductor element, wiresand electrically conductive portionsare sealed by using a sealing resin. Each of the electrically conductive portionshas overhanging portions, and a side faceof the electrically conductive portionis roughened, thus enhancing the joining strength between each electrically conductive portionand the sealing resin

An epoxy resin composition for semiconductor encapsulation which does not contain conductive foreign metallic particles having such a size that they cannot be detected and eliminated by the conventional method for eliminating conductive foreign metallic particles. The epoxy resin composition for semiconductor encapsulation comprises the following components (A) to (D). Conductive foreign metallic particles having a size of 20 &#x3bc;m or more are substantially not contained in the aforementioned epoxy resin composition.

Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same

A semiconductor device fabricating method comprises a substrate forming step of forming a plurality of separate conductive padson an adhesive layer included in an adhesive sheet, and a semiconductor chip mounting step of bonding semiconductor chips to the adhesive sheetwith surfaces thereof not provided with any electrodes in contact with the adhesive sheet, and electrically connecting electrodesformed on the semiconductor chipsand upper parts of the conductive padswith wires. The semiconductor chips, the wiresand the conductive padsare sealed in a sealing resin molding, and then the adhesive sheetis separated from the sealing resin molding. Each of the conductive padshas a reduced part, and a jutting partjutting out from the reduced part. The conductive padshaving such construction can be firmly bonded to the sealing resin molding

Semiconductor device fabricating apparatus and semiconductor device fabricating method

A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230&#xb0; C., and then mixing the component (A) and remaining components with the resulting mixture.

Method for producing epoxy resin composition for semiconductor encapsulation and epoxy resin composition for semiconductor encapsulation and semiconductor device obtained thereby

An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.

Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same

An epoxy resin composition for semiconductor encapsulation in producing surface mount lead-less thin semiconductor devices. The epoxy resin composition for surface mount lead-less semiconductor device encapsulation which device comprising an encapsulating resin layer and, encapsulated therein, a substrate, a semiconductor element mounted on the substrate, two or more conductive parts disposed around the semiconductor element, and wires which electrically connect electrodes of the semiconductor element to the conductive parts, wherein the bottom face of the substrate and the bottom face of each conductive part are exposed without being encapsulated in the encapsulating resin layer, and the epoxy resin composition used for forming the encapsulating resin layer has the following properties (&#x3b1;) and (&#x3b2;): (&#x3b1;) a melt viscosity of 2-10 Pa.s at 175&#xb0; C.; and (&#x3b2;) a flexural strength of cured state of 130 MPa or higher at ordinary temperature.

Epoxy resin composition for semiconductor encapsulation, semiconductor device using the same, and process for producing semiconductor device

An adhesive film for manufacturing a semiconductor device comprising a thermosetting adhesive layer and a heat-resistant backing layer, wherein the adhesive film is applied to a method for manufacturing a semiconductor device, comprising the steps of (a) embedding at least a part of a conductor in the adhesive film to form a conductor adhered thereto; (b) mounting a semiconductor chip on the conductor; (c) connecting the semiconductor chip to the conductor; (d) encapsulating the semiconductor chip with an encapsulation resin; and (e) removing the adhesive film therefrom. The adhesive film can be suitably used for manufacturing a semiconductor device having a so-called standoff wherein a part of a conductor is projecting from an encapsulation resin.

Adhesive film for manufacturing semiconductor device

Semiconductor sealing epoxy resin composition and semiconductor device using the same

An epoxy resin composition for semiconductor encpsulation, which is excellent in both storage stability and rapid curability, is disclosed. The epoxy resin composition for semiconductor encapsultion comprises (A) an epoxy resin, (B) a phenolic resin, and a combination of (C) a cure accelerator and (D) cure accelerator-containing microcapsules having a core/shell structure in which a cure accelerator as a core is encapsulated in a thermoplastic resin shell.

Epoxy resin composition for semiconductor encapsulation and semiconductor device

Method of producing semiconductor device and encapsulating pellet

A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.

Semiconductor device

A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.

Epoxy resin composition for semiconductor encapsulation and

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Ibaraki, Japan

Kazuhiro Ikemura