Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Chemical Corporation

Mitsubishi Engineering-plastics Corporation

Kazuhiro Ando

Takamasa Kawakami

Rieko Nakano

Yasuo Tanaka

Norio Sayama

Ryuji Fujiura

Kazuhiko Ishii

Haruhiko Kurokawa

Takeo Kanaoka

Yasuhiro Shouji

Kansei Izaki

Satoru Makinose

Ryuji Fujira

Kouichi Hakkei

Hisato Abe

A process for producing a copper-clad laminate using a copper foil obtained by subjecting the surface of the copper foil to chemical oxidation thereby to form, on the surface, a fine roughness constituted by a copper oxide of a brown to black color and then reducing the copper oxide constituting the fine roughness in an atmosphere in which a reducing gas is present.

Process for producing copper clad laminate

A process for producing a multilayered printed circuit board which comprises using, as an intermediate layer, an inner-layer board obtained by chemically oxidizing the surface of a copper foil constituting an outermost layer of an inner-layer board having a printed circuit formed in the copper foil, thereby to form on the surface a finely roughened layer constituted by a copper oxide of a brown to black color, and then reducing the copper oxide constituting the finely roughened layer in an atmosphere in which a reducing gas is present.

Process for producing multilayered printed board

Process for producing a copper plated resin article by forming a uniform copper coating having excellent adhesive strength on a fiber-reinforced or unreinforced thermoplastic or thermosetting resin article having a heat deformation temperature higher than 165.degree. C. The resin article is heated along with a source of copper formate under a reduced pressure or in a non-oxidative atmosphere to a temperature in the range above 165.degree. C. but lower than the heat deformation temperature of the resin article. The process makes it possible to produce a resin article having formed thereon a copper layer having an excellent adhesive strength by a very simple manner, and the resin article thus obtained can be used in various industrial fields.

Process of producing copper plated resin article

A process for producing a copper fine powder, which comprises thermally decomposing anhydrous copper formate in a solid phase in a non-oxidizing atmosphere at a temperature in the range of from 150.degree. to 300.degree. C., thereby yielding a copper fine powder having a primary particle diameter of from 0.2 to 1 .mu.m, a specific surface area of from 5 to 0.5 m.sup.2 /g and small agglomerating properties, said anhydrous copper formate being an anhydrous copper formate powder 90 wt % or more of which undergoes thermal decomposition within a temperature range of from 160.degree. to 200.degree. C. when the anhydrous copper formate powder is heated in a nitrogen or hydrogen gas atmosphere at a heating rate of 3.degree. C./min.

Process for producing copper fine powder

A process for producing copper formate, which comprises subjecting methyl formate to a liquid-phase hydrolysis reaction at a temperature from 60 to 85.degree. C. in the presence of copper carbonate.

Process for producing copper formate

A method for producing a copper film-formed molding is disclosed, comprising a coating a mixed solution containing at least one copper compound selected from copper hydroxide and organic acid copper salts and a polyhydric alcohol as essential components on the desired area of an article having a heat deflection temperature of at least 165.degree. C., and heating to a temperature of from 165.degree. C. to the heat deflection temperature of the article and maintaining at this temperature in a non-oxidizing atmosphere.

Method for producing copper film-formed articles

The invention relates to a sintered silicon nitride-silicon carbide composite material excellent in toughness and strength and to a process for producing the same. The present sintered composite material is substantially formed of silicon nitride predominantly in .beta.-phase and about 5 to 35% by weight of silicon carbide predominantly in .beta.-phase, which is characterized by the microstructure such that the silicon nitride is in the form of fine grains comprising elongated grains, 0.2 to 1.0 .mu.m in length of minor axis and 1 to 10 .mu.m in length of major axis, and equiaxed grains, 1 .mu.m or below in average size, and the silicon carbide is in the form of equiaxed grains, 1 .mu.m or below in average size, said silicon carbide grains being uniformly dispersed. Having a three-point flexural strength of at least 95 kg/mm.sup.2 and a fracture toughness (K.sub.IC) of at least 54 MN/m.sup.3/2, the present sintered material is excellent in toughness and strength. The process for producing such a material is disclosed in detail.

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Ibaraki, Japan

Kazuhiro Ando