Jsr Corporation

Kazuhiko Koumura

Takashi Mori

Toru Kimura

Masayuki Motonari

Shinya Minegishi

Shin-ya Nakafuji

Yoshio Takimoto

Satoru Murakami

Kyoyu Yasuda

Yuushi Matsumura

Shinya Nakafuji

Katsuhisa Mizoguchi

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180&#xb0; C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Pattern-forming method and resist underlayer film-forming composition

A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *&#x2014;COO&#x2014; or &#x2014;NR&#x2014;. Rrepresents a hydrogen atom or a Cmonovalent hydrocarbon group. Rrepresents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a Cmonovalent hydrocarbon group, a Cmonovalent oxyhydrocarbon group or a Cmonovalent sulfanilhydrocarbon group. p is an integer of 1 to 3. 

Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method

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Tokyo, Japan

Kazuhiko Koumura