Tokyo Electron Limited

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Tohoku Kabushiki Kaisha

Kazuhide Hasebe

Jun Ogawa

Hiroki Murakami

Shigeru Nakajima

Nobuaki Takahashi

Keiji Sukekawa

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Film deposition apparatus for fine pattern forming

The present invention relates to a heat treatment apparatus wherein treatment objects such as semiconductor wafers contained in a treatment boat are loaded in a treatment container such as a process tube. Water vapor is supplied from the top of the treatment container toward the bottom for heat treatment of the treatment objects to permit water vapor passage between the treatment container top and the top face of the heat treatment boat. A gas diffusion plate possessing for example 16 flow holes is provided, moreover, a heat treatment space is formed at the bottom direction of the gas diffusion plate. These flow holes are arranged at equal intervals in the circumference direction of a space between the outer circumference of the treatment objects held by the heat treatment boat and the inner side of the treatment container. As a result of this type of construction, the supplied treatment gas (water vapor) can quickly and completely cover all of a plurality of treatment objects contained horizontally at equal spacing in the vertical direction of the heat treatment apparatus to enable uniform heat treatment.

Vertical heat treatment apparatus

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Yamanashi, Japan

Kazuhide Hasebe