International Business Machines Corporation

Kaushal S Patel

Pushkara Rao Varanasi

Mahmoud M Khojasteh

Margaret C Lawson

Wu-Song S Huang

Kuang-Jung Chen

Wenjie Li

Ranee Wai-Ling Kwong

Irene Popova

Jaione Tirapu Azpiroz

Christopher Lee Tessler

Dale Curtis McHerron

James Edward Tersigni

Jerry A Gorrell

William H Heath

William Heath

The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

Top antireflective coating composition containing hydrophobic and acidic groups

The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Wet developable bottom antireflective coating composition and method for use thereof

A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.

High resolution imaging process using an in-situ image modifying layer

Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

Top antireflective coating composition with low refractive index at 193nm radiation wavelength

A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where Rrepresents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; Rrepresents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; Rrepresents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perflourinated aliphatic group; Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and ORrepresents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.

Fluorinated photoresist materials with improved etch resistant properties

A fixture having a bottom plate, top plate and an expansion block interposed between the bottom plate and top plate. A workpiece is positioned between the expansion block and bottom plate. When the fixture is heated, there is a net displacement exerted by the expansion block so as to apply pressure to the workpiece. The pressure applied by the fixture to the workpiece is due solely to the thermal expansion of the fixture when it is heated.

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Wappingers Falls, NY, United States of America

Kaushal S Patel