Applied Materials, Inc.

Photon Dynamics, Inc.

Kaushal Gangakhedkar

Joseph Yudovsky

Pravin K Narwankar

Jonathan Stuart Frankel

Kallol Bera

Colin Costano Neikirk

David P Thompson

Mark Joseph Saly

Lance A Scudder

Kevin Griffin

Thomas Knisley

Yuriy Melnik

Sukti Chatterjee

David Alexander Britz

Jennifer Y Sun

Visweswaren Sivaramakrishnan

Dmitry A Dzilno

David Masayuki Ishikawa

Abraham Ravid

Quoc Truong

David L Baldwin

Alex Minkovich

Kent Nguyen

Hai Tran

Steve Aochi

John C Forster

Philip Allan Kraus

Anantha K Subramani

Yan Wang

Robert L Barnett

Xiao-Ming He

Abhishek Chowdhury

Nile Alexander Light

Farzad Houshmand

Thomas H Bailey

Atila Ersahin

Alan Cable

Neil Dang Nguyen

Kiran Jitendra

Daniel Toet

Dave Smiley

Thomas E Wishard

Eric Thompson

Nattaworn Nuntaworanuch

Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Apparatus and methods for semiconductor processing

A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

Particle coating methods and apparatus

Apparatus and methods for wafer chucking on a susceptor for ALD

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Contour pocket and hybrid susceptor for wafer uniformity

Methods for forming protective coatings on aerospace components are provided. In one or more embodiments, the method includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a first deposition process (e.g., CVD or ALD), and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second deposition process. The first deposited layer and the second deposited layer have different compositions from each other. The method also includes repeating the first deposition process and the second deposition process to form a nanolaminate film stack having from 2 pairs to about 1,000 pairs of the first deposited layer and the second deposited layer consecutively deposited on each other.

Methods for depositing coatings on aerospace components

Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Position and temperature monitoring of ALD platen susceptor

Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.

Pedestal assemblies with a thermal barrier plate, a torque plate and at least one kinematic mount to change a plane formed by the thermal barrier plate are described. Susceptor assemblies and processing chambers incorporating the pedestal assemblies are also described. Methods of leveling a susceptor to form parallel planes between the susceptor surface and a gas distribution assembly surface are also described.

Fine leveling of large carousel based susceptor

A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated and coupled to the motors, a controller configured to cause the motors to rotate the chamber in a first direction about an axial axis at a rotation speed sufficient to force the particles to be centrifuged against an inner diameter of the chamber, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

Rotary reactor for uniform particle coating with thin films

A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors, a controller configured to cause the motors to rotate the rotary vacuum chamber about an axial axis of the rotary vacuum chamber such that the particles undergo tumbling agitation, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

Apparatus and methods for wafer rotation in carousel susceptor

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San Jose, CA, United States of America

Kaushal Gangakhedkar