Tokyo Electron Limited

Taisho Pharmaceutical Co., Ltd.

Katsuyoshi Aikawa

Hitoshi Kato

Shigehiro Miura

Hiroyuki Kikuchi

Seiichi Hori

Manabu Honma

Hiroyuki Matsuura

Jun Sato

Katsutoshi Ishii

Yasushi Takeuchi

Hiroshi Sone

Kiichi Takahashi

Toshiki Takahashi

Shinji Orimoto

Katsuhiko Oyama

Tomoko Fujimori

Masaru Yamazaki

Soichi Itoh

There is provided a mounting table. The mounting table comprises: a dielectric plate having a through-hole at an outer peripheral portion thereof and having a substrate support on which a substrate is placed; a support member; a first heat insulating member disposed between the dielectric plate and the support member; a first biasing member disposed between the first heat insulating member and the support member, and a fastening member configured to detachably fix the dielectric plate to the support member by way of penetrating through the through-hole of the dielectric plate, the first heat insulating member, and the first biasing member.

Mounting table and substrate processing apparatus

A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.

Film forming method and recording medium

A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

Film forming apparatus

A film deposition apparatus for sequentially supplying reaction gases, which mutually react, into a chamber to deposit a film on a substrate includes a turntable rotatable and including a concave portion on an upper surface, a bottom portion of the concave portion having a through hole, a substrate supporting member attachable to and detachable from the concave portion, an upper surface of the substrate supporting member mounting the substrate, a lower surface of the substrate supporting member having a first protruding portion, a drive mechanism moving up and down the turntable and revolving the turntable, a lid member located lower than the turntable, an upper surface of the lid member having a second protruding portion, and a control unit revolving the turntable to cause the first protruding portion to contact the second protruding portion and cause the substrate supporting member to be spun a predetermined angle relative to the turntable.

Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium

Film forming apparatus, film forming method, and recording medium

A substrate position detecting apparatus detects a position of a substrate inside a chamber from an image of a target inside the chamber. The apparatus includes an image pickup device to pick up the image of the target inside the chamber through a window, an illumination device to irradiate light upwards, an illumination reflecting plate provided above the illumination device and including a reflecting surface to reflect the light from the illumination device towards the window, and a reflection restricting part provided on the reflecting surface to form a shadow in a predetermined region that includes the target inside the chamber.

Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus

A substrate position detection method includes rotating the susceptor so that the substrate receiving portion is moved into an image taking area of a imaging apparatus; detecting first two position detection marks provided in the process chamber so that the first two position detection marks are within the image taking area, wherein a first perpendicular bisector of the first two position detection marks passes through a rotational center of the susceptor; detecting second two position detection marks provided in the susceptor so that the second two position detection marks can be within the image taking area, wherein a second perpendicular bisector of the second two position detection marks passes through the rotational center of the susceptor and a center of the substrate receiving portion; and determining whether the substrate receiving portion is positioned in a predetermined range in accordance with the detected first two and second two position detection marks.

Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method

A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Vertical plasma processing apparatus for semiconductor process

A suppository of retaining in a lower region of rectum, which contains a suppository base containing:

Suppository of retaining in lower region of rectum

Compositions for suppositories comprising (A) a fatty base, (B) monodecanoyl-glycerol, (C) monolauroyl-glycerol, (D) a powder insoluble in fatty base and (E) a drug for suppositories capable of giving highly useful suppositories which sustain a melting point higher than the body temperature under dry storage conditions and thus remain stable without melting during storage but, when inserted into body cavity, quickly melt or gel.

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Oshu, Japan

Katsuyoshi Aikawa