Hitachi High-Tech Corporation

Katsuo Oki

Masaaki Komori

Takayuki Mizuno

Yasuhiko Nara

A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.

Semiconductor inspection device

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber, a sample tablewhich is disposed in the vacuum chamber and on which a sampleis placed, an electron optical systemdisposed such that an electron beam is emitted from above the sample, a plurality of probe unitsconnected to external devicesanddisposed outside the vacuum chamber via a coaxial cable, and an electrodeprovided on or in the vicinity of the sample table. The probe unitincludes a measurement probeconfigured to come into contact with the sample, a GND terminalconfigured to come into contact with the electrode, and a probe holderconfigured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.

Semiconductor inspection device and probe unit

The present invention relates to a prober device that shapes an input waveform of a dynamic electric signal to be input to one of probes, and observes an output waveform of the dynamic electric signal output through a sample, or preferably shapes the input waveform such that the output waveform of the dynamic electric signal output through the sample becomes approximately a pulse shape, when a response analysis of a dynamic signal is performed with respect to a fine-Structured device. With this, the response analysis of a high-speed dynamic signal equal to or greater than a megahertz level can be performed with respect to the fine-Structured device such as a minute transistor configuring an LSI.

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Tokyo, Japan

Katsuo Oki