Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Katsuo Ebisawa

Toshio Ogawa

Osamu Ito

Tadamichi Asai

Akira Ikegami

Mitsuru Hasegawa

Takao Kobayashi

Yoshishige Endou

Noritaka Kamimura

Hiromi Isomae

Masaki Kamiakutsu

Michio Otani

Yoshishige Endoh

Michio Ootani

The present invention relates to a thick film resistor material which is suitable especially for thick film hybrid IC having conductor, resistor, semiconductor element and the like in which Cu is used as the conductor and furthermore, a thick film resistor composition which can be fired in a reducing atmosphere. The present invention further relates to a thick film hybrid IC using the thick film resistor composition as a resistor and a method for making it.

Thick film resistor composition, hybrid IC using the composition, and

In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 .mu.m. Generation of a thermal stress can be suppressed and the electroconductive particles themselves form isotropic electroconductive passages by such dispersion, and the semiconductor devices can have a distinguished electroconductivity. Preferable boride of a metal is LaB.sub.6, which gives distinguished resistor characteristics.

Semiconductor device

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Ibaraki, Japan

Katsuo Ebisawa