Tokyo Electron Limited

Katsunori Hirai

Yasuharu Sasaki

Junichi Sasaki

Kazuto Ogawa

A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.

Dechuck control method and plasma processing apparatus

Disclosed is an electrostatic attraction method including: a first step in which a gas is introduced into a chamber in which the processing target object is to be processed before a processing target object is placed on a stage within the chamber, and plasma is generated by applying a high frequency power; a second step in which a DC voltage having a polarity opposite to a polarity of a DC voltage to be applied when attracting the processing target object, to an electrostatic chuck provided on the stage after the first step; a third step where extinguishing of the plasma by stopping application of the high frequency power is performed after the second step; and a fourth step where application of the DC voltage is stopped after the third step.

Electrostatic attraction method

A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber(ST); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST), and a cycle including the exciting of the first gas (ST) and the exciting of the second gas (ST) is repeated multiple times.

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Miyagi, Japan

Katsunori Hirai