Hitachi, Ltd.

Katsunobu Abe

Hidemi Koike

Shunroku Taya

Katsumi Tokiguchi

Noriyuki Sakudo

Osami Okada

Atsushi Shibata

Norimasa Kamezawa

Satoru Kimura

An ion implantation apparatus which is suited for manufacturing semiconductor devices and which is particularly suited for implanting double charged ions into the wafers 22. Ions of a predetermined mass only are selected by a mass-separating electromagnet 14 from an ion beam 12 that is emitted from an ion source 10, and are implanted into the wafer 22 via a slit 16. Between the slit 16 and the mass-separating electromagnet, there are provided field electrodes 24 having a direction of deflection which is the same as that of the mass-separating electromagnet 14 to separate ions having different energy levels, and deflection magnets 26 having a direction of deflection at right angles with the direction of deflection of the mass-separating electromagnet. The slit 16 is arranged so that undeflected neutral particles and low energy ions deflected by the field electrodes 24 will pass through the slit while high energy ions will be deflected the proper amount to pass through the slit. Correction means 32 can be located between the slit and the wafer to ensure that the beam passing through the slit strikes the wafer at the proper angle.

Ion implantation apparatus for semiconductor manufacture

In a microwave plasma source, a discharge space supplied with a microwave electric field is supplied with a DC magnetic field. A material to be ionized is introduced into the discharge space to produce plasma, whereby ions are extracted through an ion extracting system. A switch is provided for effecting through switching operation the change-over of the magnetic field applied to the discharge space from the intensity for the ignition of plasma to the intensity for ion extraction in succession to completion of the plasma ignition.

Microwave plasma source having improved switching operation from plasma

A sample placed in a magnetic field is irradiated with a high frequency wave. The sample is rapidly rotated by a predetermined angle. Throughout the process in which the molecular orientation of the sample returns to the original state subsequently, a nuclear gyromagnetic resonance spectrum obtained from the sample can be observed.

Nuclear gyromagnetic resonance apparatus

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Katsuta, Japan

Katsunobu Abe