Hamamatsu-photonics K.k.

Katsumi Shibayama

Takafumi Yokino

Masaki Hirose

Takashi Kasahara

Masashi Ito

Hiroki Oyama

Yoshihiro Maruyama

Toshimitsu Kawai

Kazuto Ofuji

Katsuhiko Kato

Tomofumi Suzuki

Yumi Kuramoto

Yumi Teramachi

Mitsuhiro Ito

Noburo Hosokawa

Ryusuke Kitaura

Helmut Teichmann

Masahiro Yamazaki

Dietmar Hiller

Ulrich Starker

Tatsuya Sugimoto

Anna Yoshida

Kyosuke Kotani

Nao Inoue

Yutaka Kuramoto

Toshiyuki Nagata

Hisashi Takamori

Tomoya Taguchi

Yuki Yoshida

Yutaka Kusuyama

Toru Hirohata

Masahiro Hayashi

Hiroki Kamei

Hirokazu Yamamoto

Takuo Koyama

Mitsushi Mineno

Daiki Suzuki

Peter Seitz

Akira Sakamoto

Kei Tabata

Shigeru Suzuki

Masaomi Takasaka

Go Tanaka

Minoru Takase

Noriyasu Ito

Takehiko Yashiro

Seiichiro Mizuno

Masaharu Muramatsu

Takashi Iida

Ryosuke Koike

Masayuki Ishida

Mitsuaki Kageyama

Jo Ito

Andreas Durandi

Atsuya Iima

Tomohisa Itoh

Masahi Ito

Kazuo Iwazaki

A light detection device includes: a Fabry-Perot interference filter provided with a light transmission region; a light detector configured to detect light transmitted through the light transmission region; a package having an opening and accommodating the Fabry-Perot interference filter and the light detector; and a light transmitting unit arranged on an inner surface of the package so as to close an opening, the light transmitting unit including a band pass filter configured to transmit light incident on the light transmission region. When viewed from a direction parallel to the line, an outer edge of the Fabry-Perot interference filter is positioned outside an outer edge of the opening, and an outer edge of the light transmitting unit is positioned outside the outer edge of the Fabry-Perot interference filter.

Light detection device

A method of manufacturing a Fabry-Perot interference filter includes a forming step of forming a first thinned region, a first mirror layer, a sacrificial layer, and a second mirror layer are formed on a first main surface of a wafer, and the first thinned region in which at least one of the first mirror layer, the sacrificial layer, and the second mirror layer is partially thinned along each of a plurality of lines is formed; a cutting step of cutting the wafer into a plurality of substrates along each of the plurality of lines by forming a modified region within the wafer along each of the plurality of lines through irradiation of a laser light, after the forming step; and a removing step of removing a portion from the sacrificial layer through etching, between the forming step and the cutting step or after the cutting step.

Production method for Fabry-Perot interference filter

An optical filter device includes: a Fabry-Perot interference filter that includes: a first structural body having first and second surfaces; a second structural body having a third surface; a first mirror portion provided to the first structural body; a second mirror portion provided to the second structural body so as to face the first mirror portion via an air gap; a first driving electrode provided to the first structural body; a second driving electrode provided to the second structural body; first and third terminals electrically connected to the first driving electrode; and a second terminal electrically connected to the second driving electrode. A distance between the first driving electrode and the air gap is shorter than a distance between the second surface and the air gap. A resistance measurement unit is electrically connected to the first and third terminals and measures a resistance value of the first driving electrode.

Optical filter device and method for controlling optical filter device

In an optical device, a base and a movable unit are constituted by a semiconductor substrate including a first semiconductor layer, an insulating layer, and a second semiconductor layer in this order from one side in a predetermined direction. The base is constituted by the first semiconductor layer, the insulating layer, and the second semiconductor layer. The movable unit includes an arrangement portion that is constituted by the second semiconductor layer. The optical function unit is disposed on a surface of the arrangement portion on the one side. The first semiconductor layer that constitutes the base is thicker than the second semiconductor layer that constitutes the base. A surface of the base on the one side is located more to the one side than the optical function unit.

Optical device

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Method for manufacturing back surface incident type semiconductor photo detection element

Provided is a control device for controlling a Fabry-Perot interference filter having a pair of mirror parts and a pair of driving electrodes. The control device includes: a first driving source that is controlled by using a current as a control parameter, and changes the distance between the pair of mirror parts; a second driving source that is controlled by using a voltage as a control parameter, and changes the distance; and a control unit that controls the first driving source and the second driving source in such a way that the distance is changed by a first driving source in a first region and the distance is changed by the second driving source in at least one part of an region other than the first region when an region including a maximum of the voltage is defined as the first region.

Control device, optical filter system, and control method

A spectroscopic sensor includes a wiring substrate having a main surface, a light detector disposed on the main surface of the wiring substrate, a Fabry-Perot interference filter, a spacer which is provided on the main surface of the wiring substrate and supports the Fabry-Perot interference filter so that the Fabry-Perot interference filter and the light detector are separated from each other, and a stem connected to a ground potential. A second current path which has a smaller electric resistance than that of an arbitrary first current path which extends from the Fabry-Perot interference filter to the light detector via the spacer and the wiring substrate is formed between the Fabry-Perot interference filter and the stem.

A transportation method for transporting an object including a plurality of Fabry-Perot interference filters, the transportation method including a first step of accommodating the object in an accommodating container, wherein the Fabry-Perot interference filter includes a substrate, a first mirror portion and a second mirror portion provided on the substrate to face each other via a gap and in which a distance from each other is variable, and in the first step, the object is accommodated and supported in the accommodating container in a state where the plurality of Fabry-Perot interference filters is two-dimensionally arranged.

Transportation method

A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.

Method for manufacturing semiconductor substrate, method for manufacturing damascene wiring structure, semiconductor substrate, and damascene wiring structure

A light detection device of the present invention includes: a wiring board; a first support part disposed on a mounting surface of the wiring board; a Fabry-Perot interference filter having a first mirror part and a second mirror part between which a distance is variable and having an outer edge portion disposed in a first support region of the first support part; a light detector disposed on the mounting surface to face the first mirror part and the second mirror part on one side of the first support part; and a temperature detector disposed on the mounting surface, wherein the temperature detector is disposed on the mounting surface such that at least a part of the temperature detector overlaps a part of the Fabry-Perot interference filter when seen in a first direction perpendicular to the mounting surface and such that at least a part of the temperature detector overlaps a part of the first support part when seen in a second direction in which the first support part and the light detector are aligned with each other, and wherein a first distance between the temperature detector and the first support part in the second direction is smaller than a first width of the first support region in the second direction.

A mirror unitincludes a mirror deviceincluding a baseand a movable mirror, an optical function member, and a fixed mirrorthat is disposed on a side opposite to the mirror devicewith respect to the optical function member. The mirror deviceis provided with a light passage portionthat constitutes a first portion of an optical path between the beam splitter unitand the fixed mirror. The optical function memberis provided with a light transmitting portionthat constitutes a second portion of the optical path between the beam splitter unitand the fixed mirror. A second surfaceof the baseand a third surfaceof the optical function memberare joined to each other.

Mirror unit and optical module

An electrical inspection method includes: a step of preparing a wafer in which a plurality of Fabry-Perot interference filter portions is formed, each of the plurality of Fabry-Perot interference filter portions in which a distance between a first mirror portion and a second mirror portion facing each other varies by an electrostatic force; and a step of inspecting electrical characteristics of each of the plurality of Fabry-Perot interference filter portions.

Electrical inspection method

A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions constituting pn junctions with the first semiconductor region. The semiconductor substrate includes the plurality of second semiconductor in a side of the second main surface. Each of the plurality of second semiconductor regions includes a first region including a textured surface, and a second region including no textured surface. A thickness of the first region at a deepest position of recesses of the textured surface is smaller than a distance between a surface of the second region and the deepest position in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

Back surface incident type semiconductor photo detection element

The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion, an end portion of the metal layer, and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface. The end portion of the metal layer enters between the cap layer and the inclined surface, and in the end portion, a first surface along the cap layer and a second surface along the inclined surface form an acute angle.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

A light source unit includes a plurality of light sources emitting light for irradiating an object, and a holding portion holding the plurality of light sources having an insertion hole for an optical fiber inserted therethrough to propagate the light from the object formed therein. The holding portion holds each of the plurality of light sources such that an irradiation region of the light of each of the plurality of light sources is formed on one side of the holding portion. The insertion hole has a first opening that is an opening facing the irradiation region and a second opening that is an opening different from the first opening, and is formed in the holding portion such that one end surface of the optical fiber is exposed from the first opening and faces the irradiation region when the optical fiber is inserted therethrough.

Light source unit and optical head

Growing community of inventors

Hamamatsu, Japan

Katsumi Shibayama