Mitsubishi Materials Corporation

Symetrix Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Other

Katsumi Ogi

Hiroto Uchida

Nobuyuki Soyama

Tadashi Yonezawa

Tsutomu Atsuki

Atsushi Itsuki

Carlos Alberto Paz De Araujo

Larry D McMillan

Michael C Scott

Kensuke Kageyama

Etsuji Kimura

Hideyuki Hirakoso

Kazusuke Sato

Taiji Tachibana

Joseph D Cuchiaro

Hiroki Hirata

Go Sasaki

Mayuki Hashimoto

Shingo Okamura

Maki Sugino

Masayuki Ishikawa

Shan Sun

Yoshinori Takayama

Jeffrey W Bacon

Tom E Davenport

Akio Yanagisawa

Thomas Domokos Hadnagy

Akihiko Mieda

Kensuke Kegeyama

Gakuji Uozumi

Gary F Derbenuick

Norimiti Saitou

Kazuo Wakabayashi

Bis(cyclopentadienyl)ruthenium complex havimg a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5 ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100 ppm of rhenium The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium-containing thin film.

Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds

The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition of a PZT thin film over a broad temperature range. The raw material solution is less likely to react an organolead compound even when mixed with the organolead compound. The present invention provides a raw material solution which is less likely to cause vapor phase cracking. The organozirconium composite comprises one, or at least two kinds of zirconium chelate complexes containing, as a ligand, both of a first &#x3b2; diketone and a second &#x3b2; diketone having a structure different from that of the first &#x3b2; diketone, wherein, when at least two kinds of zirconium chelate complexes are contained, the coordination numbers of the first &#x3b2; diketone and the second &#x3b2; diketone that coordinate to at least two kinds of zirconium chelate complexes vary depending on the respective zirconium chelate complexes.

Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film

A silica powder surface-treated with and epoxy compound having a plurality of epoxy groups, in which at least one epoxy group of the epoxy compound is ring-opened to bind to the surface of the silica powder and at least a portion of the remaining epoxy groups of the epoxy compound are bonded to amine compounds. The silica powder may be produced by the surface treatment of a silica powder with an epoxy compound and an amine compound successively or with both these compound simultaneously.

Silica powder and method for producing the same

Organozirconium compound, organic solution comprising same, and zirconium-containing thin film therefrom

The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine. These solutions can be used in a metal oxide chemical deposition method (a MOCVD method, a chemical vapor deposition method using an organometallic compound) to prepare composite oxide (for example, barium strontium titanate) type dielectric thin films on substrates.

Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film

Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Organic titanium compound suitable for MOCVD

An organic copper compound is provided that is represented by the following formula (1) in which monovalent copper is coordinated with a &bgr;-diketone compound and an unsaturated hydrocarbon compound having a silyloxy group:

Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution

Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, wherein 0.9&lE;V&lE;1.3, 0&lE;W&lE;0.1, 0&lE;X&lE;0.1, 0<Y&lE;0.1, 0<Z&lE;0.9 and at least either of W and X is not 0, is formed from a solution where thermally decomposable organometallic compounds of respective metals constituting said metal oxide, hydrolyzable organometallic compounds thereof, and partially hydrolyzed products and/or polycondensation products of said hydrolyzable organometallic compounds are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the above-mentioned formula.

Ferroelectric thin films and solutions: compositions

A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.

Ferroelectric/high dielectric constant integrated circuit and method of

A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.

Method of fabricating an integrated circuit using self-patterned thin

Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.

Shelf-stable liquid metal arylketone alcoholate solutions and use

A photosensitive liquid precursor solution including titanium carboxyketoesters or titanium carboxydiketonates polymerizes upon exposure to ultraviolet radiation. The solution is applied to an integrated circuit substrate, masked, and exposed to ultraviolet radiation to pattern the liquid precursor film. Unexposed portions of the film are removed in a developer solution including alcohol and water. The remaining portion of the film constitutes a pattern that may be annealed to form a metal oxide.

Photosensitive titanium carboxydiketonate and titanium carboxyketoester

A composition for forming a film, comprising a solution of metal compounds in an organic solvent, wherein a molar ratio of metals in said solution is (Sr.sub.1-n R.sub.n):Bi:(Ta.sub.Y Nb.sub.1-Y)=X:Q:2, R is at least one element selected from the group consisting of La, Ce, Pr, Nd, Eu, Sm, Tb, Gd and Er, and 0&lt;n.ltoreq.0.1, 0.4.ltoreq.X&lt;1, 0.ltoreq.Y.ltoreq.1 and 1.5.ltoreq.Q.ltoreq.3.5, can be used to form a ferroelectric film. This ferroelectric film is useful in a ferroelectric capacitor, particularly a ferroelectric capacitor for a non-volatile memory.

Growing community of inventors

Saitama, Japan

Katsumi Ogi