Hitachi, Ltd.

Renesas Technology Corp.

Katsuhiro Ota

Akio Saito

Hitoshi Oka

Teruhisa Ichise

Yoichi Takahara

Michimasa Funabashi

Hisahiko Abe

Haruo Itoh

Shinichi Nakabayashi

Katsuhiko Itoh

Noriyo Tomiyama

In order to prevent dusting from a peripheral end portion of a wafer, a semiconductor film formed is removed from at least the entire surface of the backside of the wafer and from the peripheral portion of the wafer by etching at a high etching rate relative to an insulating film present beneath the semiconductor film, to realize a semiconductor apparatus in which the semiconductor film is formed in an integrated circuit pattern region on the face side of the wafer. Thus, the problem of dusting from the peripheral portion of the wafer is obviated, and a semiconductor apparatus with high reliability is realized.

Process for semiconductor apparatus including forming an insulator and a semiconductor film on the backside of the wafer and removing the semiconductor film from the backside

A polishing slurry prepared by dispersing in a dispersion medium, abrasive grains comprised of a material having a solubility in the dispersion medium at 25&deg; C., of 0.001 g/100 g or higher is used to effectively remove any abrasive grains standing adherent to the surfaces of objects to be polished or the interiors of polishing apparatus after polishing.

Polishing slurry

Method for polishing a semiconductor substrate member

Process for fabricating a semiconductor device

For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

Fabrication method for semiconductor integrated circuit device

By employing a cleaning method wherein a substrate such as Si wafer is covered with a film having electrostatic repulsive force or a substance capable of controlling a zeta potential so as to prevent or remarkably reduce adhesion of fine particles present in a cleaning solution or etching solution, electronic parts can be produced in higher yield and lower cost.

Semiconductor cleaning and production methods using a film repulsing

A method of controlling the adhesion of fine particles to an object in a solution characterized in that the adhesion of fine particles in the solution is prevented or reduced by adding into the solution a material, which is capable of controlling the zeta potential (surface potential) of the fine particles, in the amount of 10.sup.-7 to 25% by volume.

Method of controlling adhesion of fine particles to an object in liquid

Growing community of inventors

Yokohama, Japan

Katsuhiro Ota